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Transistors Power Field-Effect Transistors IRFZ30

Transistors
IRFZ30
Description: Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of IRFZ30 by Samsung Semiconductor

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Part Data Attributes for IRFZ30 by Samsung Semiconductor
Parametric Data

IRFZ30
Samsung Semiconductor
Buy Now
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
19 mJ
Configuration
SINGLE
DS Breakdown Voltage-Min
50 V
Drain Current-Max (ID)
30 A
Drain-source On Resistance-Max
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
90 W
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
120 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
133 ns
Turn-on Time-Max (ton)
131 ns
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  1. IRFZ30
    Samsung Semiconductor
    Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

Alternate Parts for IRFZ30

This table gives cross-reference parts and alternative options found for IRFZ30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFP25N06 Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation IRFZ30 vs RFP25N06
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRFZ30 vs IRFZ30
BUZ10 Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens IRFZ30 vs BUZ10
BUZ11A Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG IRFZ30 vs BUZ11A
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRFZ30 vs IRFZ30
IRFZ30 30A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFZ30 vs IRFZ30
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation IRFZ30 vs HUF75309P3_NL
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFZ30 vs BUZ11A
HUF75309P3 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRFZ30 vs HUF75309P3
BUZ11A Power Field-Effect Transistor, 30A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors IRFZ30 vs BUZ11A
Part Number Description Manufacturer Compare
HUF75329D3S 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFZ30 vs HUF75329D3S
HUFA75321D3ST Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFZ30 vs HUFA75321D3ST
HUFA75309P3 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRFZ30 vs HUFA75309P3
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRFZ30 vs IRFZ24N
FDB045AN08A0 Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation IRFZ30 vs FDB045AN08A0
HUFA76409D3S 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRFZ30 vs HUFA76409D3S
IRFR1205PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFZ30 vs IRFR1205PBF
HUFA76419D3S 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRFZ30 vs HUFA76419D3S
934056258127 TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors IRFZ30 vs 934056258127
HUF75329D3ST 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFZ30 vs HUF75329D3ST

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