Datasheets
IRG4RC20FPBF by:

Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3

Part Details for IRG4RC20FPBF by International Rectifier

Overview of IRG4RC20FPBF by International Rectifier

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Price & Stock for IRG4RC20FPBF

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRG4RC20FPBF-ND
DigiKey FAST SPEED IGBT Min Qty: 392 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 6450
In Stock
  • 392 $0.7700
$0.7700 Buy Now
Quest Components   556
  • 1 $3.9600
  • 153 $1.8315
  • 329 $1.6335
$1.6335 / $3.9600 Buy Now
Rochester Electronics IRG4RC20 - Discrete IGBT without Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 6450
  • 1 $0.7729
  • 25 $0.7574
  • 100 $0.7265
  • 500 $0.6956
  • 1,000 $0.6570
$0.6570 / $0.7729 Buy Now
ComSIT USA FAST SPEED INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Compliant Europe - 300
RFQ

Part Details for IRG4RC20FPBF

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IRG4RC20FPBF Part Data Attributes:

IRG4RC20FPBF International Rectifier
Buy Now Datasheet
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IRG4RC20FPBF International Rectifier Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-252AA
Package Description LEAD FREE, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 22 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 340 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 66 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 706 ns
Turn-on Time-Nom (ton) 51 ns

Alternate Parts for IRG4RC20FPBF

This table gives cross-reference parts and alternative options found for IRG4RC20FPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4RC20FPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4RC20FTRPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRG4RC20FPBF vs IRG4RC20FTRPBF
IRG4RC20FTRR Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC20FPBF vs IRG4RC20FTRR
IRG4RC20FTRPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRG4RC20FPBF vs IRG4RC20FTRPBF
IRG4RC20F Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC20FPBF vs IRG4RC20F
IRG4RC20FTRLPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRG4RC20FPBF vs IRG4RC20FTRLPBF
IRG4RC20FTRLPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRG4RC20FPBF vs IRG4RC20FTRLPBF
IRG4RC20F Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC20FPBF vs IRG4RC20F
IRG4RC20FPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRG4RC20FPBF vs IRG4RC20FPBF
Part Number Description Manufacturer Compare
IRG4RC20F Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC20FPBF vs IRG4RC20F
IRG4RC20FTRLPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRG4RC20FPBF vs IRG4RC20FTRLPBF
IRG4RC20FTRLPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRG4RC20FPBF vs IRG4RC20FTRLPBF
IRG4RC20F Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC20FPBF vs IRG4RC20F
IRG4RC20FTRR Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC20FPBF vs IRG4RC20FTRR
IRG4RC20FPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRG4RC20FPBF vs IRG4RC20FPBF
IRG4RC20FTRPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRG4RC20FPBF vs IRG4RC20FTRPBF
IRG4RC20FTRPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRG4RC20FPBF vs IRG4RC20FTRPBF

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