IRL2910STRR
Description: Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

Overview of IRL2910STRR by International Rectifier

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Price & Stock for IRL2910STRR by International Rectifier

Part # Manufacturer Description Stock Price Buy
Quest Components   456
  • 1 $5.4000
  • 70 $3.3300
  • 301 $2.9700
$2.9700 / $5.4000 Buy Now

CAD Models for IRL2910STRR by International Rectifier
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Part Data Attributes for IRL2910STRR by International Rectifier

IRL2910STRR
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED
Avalanche Energy Rating (Eas)
520 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
55 A
Drain-source On Resistance-Max
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
200 W
Pulsed Drain Current-Max (IDM)
190 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRL2910STRR
    International Rectifier
    Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
    VS

Alternate Parts for IRL2910STRR

This table gives cross-reference parts and alternative options found for IRL2910STRR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2910STRR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRL2910SPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRL2910STRR vs IRL2910SPBF
IRL2910S Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG IRL2910STRR vs IRL2910S
IRL2910STRRPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRL2910STRR vs IRL2910STRRPBF
IRL2910SPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRL2910STRR vs IRL2910SPBF
IRL2910STRRPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRL2910STRR vs IRL2910STRRPBF
IRL2910STRLPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRL2910STRR vs IRL2910STRLPBF
IRL2910S Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRL2910STRR vs IRL2910S
Part Number Description Manufacturer Compare
IRL2910STRRPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRL2910STRR vs IRL2910STRRPBF
IRL2910S Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRL2910STRR vs IRL2910S
2SK3358 Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN NEC Electronics Group IRL2910STRR vs 2SK3358
HUF76639S3S Power Field-Effect Transistor, 51A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation IRL2910STRR vs HUF76639S3S
IRL2910S Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG IRL2910STRR vs IRL2910S
IRL2910STRRPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRL2910STRR vs IRL2910STRRPBF
IRL2910STRL Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRL2910STRR vs IRL2910STRL
HUF76639S3ST N-Channel Logic Level UltraFET® Power MOSFET 100V, 50A, 26mΩ, 800-REEL onsemi IRL2910STRR vs HUF76639S3ST
IRL2910STRLPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRL2910STRR vs IRL2910STRLPBF
IRL2910LPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRL2910STRR vs IRL2910LPBF

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