Part Details for IRL5NJ024SCV by Infineon Technologies AG
Overview of IRL5NJ024SCV by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Medical Imaging
Part Details for IRL5NJ024SCV
IRL5NJ024SCV CAD Models
IRL5NJ024SCV Part Data Attributes
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IRL5NJ024SCV
Infineon Technologies AG
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Datasheet
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IRL5NJ024SCV
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, SMD0.5, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 56 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRL5NJ024SCV
This table gives cross-reference parts and alternative options found for IRL5NJ024SCV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL5NJ024SCV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD20N06LETF | Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | IRL5NJ024SCV vs FQD20N06LETF |
| IRL5NJ024SCX | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | IRL5NJ024SCV vs IRL5NJ024SCX |
| IRFZ24NPBF | 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | IRL5NJ024SCV vs IRFZ24NPBF |
| IRL5NJ024PBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | IRL5NJ024SCV vs IRL5NJ024PBF |
| IRL5NJ024 | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | IRL5NJ024SCV vs IRL5NJ024 |
| NTDV18N06LT4G | Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified | onsemi | IRL5NJ024SCV vs NTDV18N06LT4G |
| IPD640N06LGBTMA1 | Power Field-Effect Transistor, 18A I(D), 60V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IRL5NJ024SCV vs IPD640N06LGBTMA1 |
| IRFZ24NHR | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRL5NJ024SCV vs IRFZ24NHR |
| IRLZ24NS | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRL5NJ024SCV vs IRLZ24NS |
| FQD20N06L | Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | IRL5NJ024SCV vs FQD20N06L |