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Part Details for IRLR3410TRPBF by Infineon Technologies AG
Overview of IRLR3410TRPBF by Infineon Technologies AG
- Distributor Offerings: (25 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IRLR3410TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J7648
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Newark | N Channel Mosfet, 100V, 17A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:17A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLR3410TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 16329 |
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$0.5470 / $1.1400 | Buy Now |
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DISTI #
IRLR3410PBFCT-ND
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DigiKey | MOSFET N-CH 100V 17A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
33562 In Stock |
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$0.3759 / $1.5200 | Buy Now |
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DISTI #
IRLR3410TRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR3410TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2815 | Buy Now |
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DISTI #
IRLR3410TRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR3410TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.2815 | Buy Now |
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DISTI #
942-IRLR3410TRPBF
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Mouser Electronics | MOSFETs 100V 1 N-CH HEXFET 105mOhms 22.7nC RoHS: Compliant | 37406 |
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$0.3750 / $1.1700 | Buy Now |
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DISTI #
70019260
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RS | IRLR3410TRPBF N-channel MOSFET Transistor, 17 A, 100 V, 3-Pin DPAK | Infineon IRLR3410TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
|
$0.9300 / $1.0900 | RFQ |
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Future Electronics | Single N-Channel 100V 155 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 138000Reel |
|
$0.2950 / $0.3150 | Buy Now |
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Future Electronics | Single N-Channel 100V 155 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$0.2950 / $0.3150 | Buy Now |
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DISTI #
84416183
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Verical | Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2431 | Americas - 148000 |
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$0.4230 | Buy Now |
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DISTI #
69704977
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Verical | Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2326 | Americas - 32000 |
|
$0.2919 | Buy Now |
Part Details for IRLR3410TRPBF
IRLR3410TRPBF CAD Models
IRLR3410TRPBF Part Data Attributes
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IRLR3410TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR3410TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 90 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 79 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR3410TRPBF
This table gives cross-reference parts and alternative options found for IRLR3410TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR3410TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRLR3410 | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3410TRPBF vs AUIRLR3410 |
| IRLR3410TRLPBF | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR3410TRPBF vs IRLR3410TRLPBF |
| IRLR3410TRL | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRLR3410TRPBF vs IRLR3410TRL |
| IRLR3410TRRPBF | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR3410TRPBF vs IRLR3410TRRPBF |
| AUIRLR3410TRL | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3410TRPBF vs AUIRLR3410TRL |
| IRLR3410 | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRLR3410TRPBF vs IRLR3410 |
| AUIRLR3410TR | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR3410TRPBF vs AUIRLR3410TR |
| IRLR3410TRRPBF | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3410TRPBF vs IRLR3410TRRPBF |
| IRLR3410TRLPBF | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3410TRPBF vs IRLR3410TRLPBF |
| IRLR3410TRPBF | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR3410TRPBF vs IRLR3410TRPBF |