Part Details for IS41LV82002-60JI by Integrated Silicon Solution Inc
Overview of IS41LV82002-60JI by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for IS41LV82002-60JI
IS41LV82002-60JI CAD Models
IS41LV82002-60JI Part Data Attributes
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IS41LV82002-60JI
Integrated Silicon Solution Inc
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Datasheet
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IS41LV82002-60JI
Integrated Silicon Solution Inc
EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | SOJ | |
| Package Description | 0.300 INCH, SOJ-28 | |
| Pin Count | 28 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE WITH EDO | |
| Access Time-Max | 60 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-J28 | |
| JESD-609 Code | e0 | |
| Length | 18.161 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | EDO DRAM | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 28 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 2MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOJ | |
| Package Equivalence Code | SOJ28,.34 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 2048 | |
| Seated Height-Max | 3.556 mm | |
| Self Refresh | NO | |
| Standby Current-Max | 0.0005 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | J BEND | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL | |
| Width | 7.62 mm |
Alternate Parts for IS41LV82002-60JI
This table gives cross-reference parts and alternative options found for IS41LV82002-60JI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS41LV82002-60JI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT4LC2M8E7DJ-6STR | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | Micron Technology Inc | IS41LV82002-60JI vs MT4LC2M8E7DJ-6STR |
| K4E160812D-BC600 | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | Samsung Semiconductor | IS41LV82002-60JI vs K4E160812D-BC600 |
| MT4LC2M8E7DJ-6TR | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | Micron Technology Inc | IS41LV82002-60JI vs MT4LC2M8E7DJ-6TR |
| IS41LV8200-60JI | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | Integrated Silicon Solution Inc | IS41LV82002-60JI vs IS41LV8200-60JI |
| KM48V2004BK-L6 | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | Samsung Semiconductor | IS41LV82002-60JI vs KM48V2004BK-L6 |
| MT4LC2M8F4DJ-6 | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | Micron Technology Inc | IS41LV82002-60JI vs MT4LC2M8F4DJ-6 |
| K4E170812C-BC600 | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | Samsung Semiconductor | IS41LV82002-60JI vs K4E170812C-BC600 |
| MT4LC2M8E7DJ-6S | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | Micron Technology Inc | IS41LV82002-60JI vs MT4LC2M8E7DJ-6S |
| HY51V16804CJ-60 | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | SK Hynix Inc | IS41LV82002-60JI vs HY51V16804CJ-60 |
| KM48V2104BK-L6 | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | Samsung Semiconductor | IS41LV82002-60JI vs KM48V2104BK-L6 |