Datasheets
IS41LV8200B-60JL by: Integrated Silicon Solution Inc

EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28

Part Details for IS41LV8200B-60JL by Integrated Silicon Solution Inc

Overview of IS41LV8200B-60JL by Integrated Silicon Solution Inc

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for IS41LV8200B-60JL

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IS41LV8200B-60JL Part Data Attributes

IS41LV8200B-60JL Integrated Silicon Solution Inc
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IS41LV8200B-60JL Integrated Silicon Solution Inc EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code SOJ
Package Description SOJ, SOJ28,.34
Pin Count 28
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-PDSO-J28
JESD-609 Code e3
Length 18.415 mm
Memory Density 16777216 bit
Memory IC Type EDO DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 28
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOJ
Package Equivalence Code SOJ28,.34
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 2048
Seated Height-Max 3.56 mm
Self Refresh NO
Standby Current-Max 0.001 A
Supply Current-Max 0.14 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form J BEND
Terminal Pitch 1.27 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Width 7.62 mm

Alternate Parts for IS41LV8200B-60JL

This table gives cross-reference parts and alternative options found for IS41LV8200B-60JL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS41LV8200B-60JL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HM51W17805BS-6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Hitachi Ltd IS41LV8200B-60JL vs HM51W17805BS-6
IS41LV8200B-60J EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Integrated Silicon Solution Inc IS41LV8200B-60JL vs IS41LV8200B-60J
HM51W17805S-6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Hitachi Ltd IS41LV8200B-60JL vs HM51W17805S-6
HY51V17804CJ-60 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 SK Hynix Inc IS41LV8200B-60JL vs HY51V17804CJ-60
IS41LV8200A-60J EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Integrated Silicon Solution Inc IS41LV8200B-60JL vs IS41LV8200A-60J
HM51W17805S-6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Elpida Memory Inc IS41LV8200B-60JL vs HM51W17805S-6
Part Number Description Manufacturer Compare
IBM0117805PT3-6R EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 X 0.725 INCH, TSOP2-28 IBM IS41LV8200B-60JL vs IBM0117805PT3-6R
KM48V2004CK-L6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Samsung Semiconductor IS41LV8200B-60JL vs KM48V2004CK-L6
UPD42S16805LG5-A60 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28 NEC Electronics America Inc IS41LV8200B-60JL vs UPD42S16805LG5-A60
MB81V17805B-60PFTN 2MX8 EDO DRAM, 60ns, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28 FUJITSU Semiconductor Limited IS41LV8200B-60JL vs MB81V17805B-60PFTN
MSM51V17805BSL-60TS-K EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 OKI Electric Industry Co Ltd IS41LV8200B-60JL vs MSM51V17805BSL-60TS-K
UPD42S17805LG5-A60 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28 NEC Electronics America Inc IS41LV8200B-60JL vs UPD42S17805LG5-A60
UPD4216805LG5-A60 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28 NEC Electronics America Inc IS41LV8200B-60JL vs UPD4216805LG5-A60
HY51V16804CT-60 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 SK Hynix Inc IS41LV8200B-60JL vs HY51V16804CT-60
KM48V2004CS-L6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 Samsung Semiconductor IS41LV8200B-60JL vs KM48V2004CS-L6
KM48V2004BK-6 EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Samsung Semiconductor IS41LV8200B-60JL vs KM48V2004BK-6

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