There are no models available for this part yet.
Overview of IS42S16400B-7T by Integrated Silicon Solution Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Consumer Electronics
Computing and Data Storage
Price & Stock for IS42S16400B-7T by Integrated Silicon Solution Inc
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 1114 |
|
RFQ | ||||
Bristol Electronics | 210 |
|
RFQ | ||||
Quest Components | 4M X 16 SYNCHRONOUS DRAM, 6 ns, 54 Pin Plastic SMT | 891 |
|
$3.7065 / $7.4130 | Buy Now |
CAD Models for IS42S16400B-7T by Integrated Silicon Solution Inc
Part Data Attributes for IS42S16400B-7T by Integrated Silicon Solution Inc
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INTEGRATED SILICON SOLUTION INC
|
Part Package Code
|
TSOP2
|
Package Description
|
TSOP2, TSOP54,.46,32
|
Pin Count
|
54
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8542.32.00.02
|
Access Mode
|
FOUR BANK PAGE BURST
|
Access Time-Max
|
6 ns
|
Additional Feature
|
AUTO/SELF REFRESH
|
Clock Frequency-Max (fCLK)
|
133 MHz
|
I/O Type
|
COMMON
|
Interleaved Burst Length
|
1,2,4,8
|
JESD-30 Code
|
R-PDSO-G54
|
JESD-609 Code
|
e0
|
Length
|
22.22 mm
|
Memory Density
|
67108864 bit
|
Memory IC Type
|
SYNCHRONOUS DRAM
|
Memory Width
|
16
|
Moisture Sensitivity Level
|
3
|
Number of Functions
|
1
|
Number of Ports
|
1
|
Number of Terminals
|
54
|
Number of Words
|
4194304 words
|
Number of Words Code
|
4000000
|
Operating Mode
|
SYNCHRONOUS
|
Operating Temperature-Max
|
70 °C
|
Operating Temperature-Min
|
|
Organization
|
4MX16
|
Output Characteristics
|
3-STATE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Code
|
TSOP2
|
Package Equivalence Code
|
TSOP54,.46,32
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
Qualification Status
|
Not Qualified
|
Refresh Cycles
|
4096
|
Seated Height-Max
|
1.2 mm
|
Self Refresh
|
YES
|
Sequential Burst Length
|
1,2,4,8,FP
|
Standby Current-Max
|
0.002 A
|
Supply Current-Max
|
0.125 mA
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
Supply Voltage-Min (Vsup)
|
3 V
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
Surface Mount
|
YES
|
Technology
|
CMOS
|
Temperature Grade
|
COMMERCIAL
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
GULL WING
|
Terminal Pitch
|
0.8 mm
|
Terminal Position
|
DUAL
|
Width
|
10.16 mm
|
Alternate Parts for IS42S16400B-7T
This table gives cross-reference parts and alternative options found for IS42S16400B-7T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S16400B-7T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IS42S16400A-7TL | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | Integrated Silicon Solution Inc | IS42S16400B-7T vs IS42S16400A-7TL |
M2V64S40DTP-7 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Mitsubishi Electric | IS42S16400B-7T vs M2V64S40DTP-7 |
K4S641632E-TC1H | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | IS42S16400B-7T vs K4S641632E-TC1H |
VG36641641DTL-8H | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Vanguard International Semiconductor Corporation | IS42S16400B-7T vs VG36641641DTL-8H |
HY57V641620HGLT-S | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | IS42S16400B-7T vs HY57V641620HGLT-S |
VG36641641BT-8P | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | IS42S16400B-7T vs VG36641641BT-8P |
KM416S4030BT-GL | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | IS42S16400B-7T vs KM416S4030BT-GL |
MT48LC4M16A2TG-8CL | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | IS42S16400B-7T vs MT48LC4M16A2TG-8CL |
MB81F641642C-102FN | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | IS42S16400B-7T vs MB81F641642C-102FN |
K4S641632D-TL700 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | IS42S16400B-7T vs K4S641632D-TL700 |
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