IS42S16800F-6BLI-TR
Integrated Silicon Solution Inc
Description: Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54,

Overview of IS42S16800F-6BLI-TR by Integrated Silicon Solution Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Internet of Things (IoT) Industrial Automation Computing and Data Storage Renewable Energy Entertainment and Gaming Robotics and Drones

Price & Stock for IS42S16800F-6BLI-TR by Integrated Silicon Solution Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 65T1265
Newark 128M, 3.3V, Sdram, 8Mx16, 166Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, It, T&r |Integrated Silicon Solution (Issi) IS42S16800F-6BLI-TR RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 870-IS42S16800F6BLIT
Mouser Electronics DRAM 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS, IT, T&R RoHS: Compliant 3140
  • 1 $4.8700
  • 10 $4.4200
  • 100 $3.8600
  • 250 $3.8400
  • 500 $3.7000
  • 1,000 $3.5200
  • 2,500 $3.3500
$3.3500 / $4.8700 Buy Now
New Advantage Corporation 128M, 3.3V, SDRAM, 8MX16, 166MHZ, 54 BALL BGA (8MMX8MM) ROHS, RoHS: Compliant Min Qty: 1 Package Multiple: 2500 5000
  • 2,500 $4.8600
  • 5,000 $4.5000
$4.5000 / $4.8600 Buy Now

CAD Models for IS42S16800F-6BLI-TR by Integrated Silicon Solution Inc
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Part Data Attributes for IS42S16800F-6BLI-TR by Integrated Silicon Solution Inc

IS42S16800F-6BLI-TR
Integrated Silicon Solution Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Package Description
FBGA, BGA54,9X9,32
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Integrated Silicon Solution Inc.
Access Time-Max
5.4 ns
Clock Frequency-Max (fCLK)
166 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
S-PBGA-B54
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Terminals
54
Number of Words
8388608 words
Number of Words Code
8000000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
8MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
FBGA
Package Equivalence Code
BGA54,9X9,32
Package Shape
SQUARE
Package Style
GRID ARRAY, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
4096
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.002 A
Supply Current-Max
0.12 mA
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Want to compare parts?
  1. IS42S16800F-6BLI-TR
    Integrated Silicon Solution Inc
    Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54,
    VS

Alternate Parts for IS42S16800F-6BLI-TR

This table gives cross-reference parts and alternative options found for IS42S16800F-6BLI-TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S16800F-6BLI-TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HY5V26FF-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc IS42S16800F-6BLI-TR vs HY5V26FF-6I
HY5V26EF-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc IS42S16800F-6BLI-TR vs HY5V26EF-6I
IS42S16800F-6BL Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 Integrated Silicon Solution Inc IS42S16800F-6BLI-TR vs IS42S16800F-6BL
HY5V26EFP-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc IS42S16800F-6BLI-TR vs HY5V26EFP-6I
IS42S16800E-6BLI Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 Integrated Silicon Solution Inc IS42S16800F-6BLI-TR vs IS42S16800E-6BLI
HY5V26FFP-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc IS42S16800F-6BLI-TR vs HY5V26FFP-6I
IS42S16800F-6BLI Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 Integrated Silicon Solution Inc IS42S16800F-6BLI-TR vs IS42S16800F-6BLI
Part Number Description Manufacturer Compare
MT48LC8M16A2B4-6AXIT:L Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, VFBGA-54 Micron Technology Inc IS42S16800F-6BLI-TR vs MT48LC8M16A2B4-6AXIT:L
MT48LC8M16A2B4-6AAT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 Micron Technology Inc IS42S16800F-6BLI-TR vs MT48LC8M16A2B4-6AAT:G
MT48LC8M16A2B4-6A Synchronous DRAM, Micron Technology Inc IS42S16800F-6BLI-TR vs MT48LC8M16A2B4-6A
MT48LC8M16A2B4-6ALIT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 Micron Technology Inc IS42S16800F-6BLI-TR vs MT48LC8M16A2B4-6ALIT:G
MT48LC8M16A2B4-6AIT Synchronous DRAM, Micron Technology Inc IS42S16800F-6BLI-TR vs MT48LC8M16A2B4-6AIT
MT48LC8M16A2B4-6AL:GAIT Synchronous DRAM, Micron Technology Inc IS42S16800F-6BLI-TR vs MT48LC8M16A2B4-6AL:GAIT
MT48LC8M16A2B4-6ALAT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 Micron Technology Inc IS42S16800F-6BLI-TR vs MT48LC8M16A2B4-6ALAT:G
MT48LC8M16A2B4-6AIT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 Micron Technology Inc IS42S16800F-6BLI-TR vs MT48LC8M16A2B4-6AIT:G
MT48LC8M16A2B4-6AXIT Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, PLASTIC, VFBGA-54 Micron Technology Inc IS42S16800F-6BLI-TR vs MT48LC8M16A2B4-6AXIT
IS42S16800F-6BL Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 Integrated Silicon Solution Inc IS42S16800F-6BLI-TR vs IS42S16800F-6BL

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