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Memory DRAMs IS42S32200C1-7BL

Memory
IS42S32200C1-7BL
Integrated Silicon Solution Inc
Description: Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-90

Overview of IS42S32200C1-7BL by Integrated Silicon Solution Inc

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Price & Stock for IS42S32200C1-7BL by Integrated Silicon Solution Inc

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   179
RFQ
Quest Components   578
  • 1 $5.3400
  • 71 $3.2930
  • 305 $2.9370
$2.9370 / $5.3400 Buy Now
Quest Components   143
  • 1 $6.4080
  • 17 $4.2720
  • 60 $3.9516
$3.9516 / $6.4080 Buy Now

CAD Models for IS42S32200C1-7BL by Integrated Silicon Solution Inc
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Part Data Attributes for IS42S32200C1-7BL by Integrated Silicon Solution Inc
Parametric Data

IS42S32200C1-7BL
Integrated Silicon Solution Inc
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
BGA
Package Description
TFBGA, BGA90,9X15,32
Pin Count
90
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.5 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
143 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B90
JESD-609 Code
e1
Length
13 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
2MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA90,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.002 A
Supply Current-Max
0.18 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
10
Width
8 mm
Want to compare parts?
  1. IS42S32200C1-7BL
    Integrated Silicon Solution Inc
    Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-90
    VS

Alternate Parts for IS42S32200C1-7BL

This table gives cross-reference parts and alternative options found for IS42S32200C1-7BL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S32200C1-7BL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IS42SM32200K-6BLI Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42S32200C1-7BL vs IS42SM32200K-6BLI
IS42S32200E-6BL Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42S32200C1-7BL vs IS42S32200E-6BL
K4S643233H-FG1H0 Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32200C1-7BL vs K4S643233H-FG1H0
HY5V62DF-55 Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-90 SK Hynix Inc IS42S32200C1-7BL vs HY5V62DF-55
IS42S32200E-6BLI 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, LEAD FREE, 0.80 MM PITCH, TFBGA-90 ABLIC Inc. IS42S32200C1-7BL vs IS42S32200E-6BLI
K4S643233H-FN600 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32200C1-7BL vs K4S643233H-FN600
HY5V62CF-S Synchronous DRAM, 2GX32, 6ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, FBGA-90 SK Hynix Inc IS42S32200C1-7BL vs HY5V62CF-S
K4S64323LH-FE1H0 Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42S32200C1-7BL vs K4S64323LH-FE1H0
MT48LC2M32B2B5-55AT:G Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Micron Technology Inc IS42S32200C1-7BL vs MT48LC2M32B2B5-55AT:G
K4S643233H-HE750 Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42S32200C1-7BL vs K4S643233H-HE750

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