Part Details for IS42VS16100D-75TE by Integrated Silicon Solution Inc
Overview of IS42VS16100D-75TE by Integrated Silicon Solution Inc
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- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IS42VS16100D-75TE
IS42VS16100D-75TE CAD Models
IS42VS16100D-75TE Part Data Attributes
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IS42VS16100D-75TE
Integrated Silicon Solution Inc
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IS42VS16100D-75TE
Integrated Silicon Solution Inc
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, PLASTIC, TSOP2-50
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP50,.46,32 | |
| Pin Count | 50 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e0 | |
| Length | 20.95 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 1MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 2048 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.00001 A | |
| Supply Current-Max | 0.06 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for IS42VS16100D-75TE
This table gives cross-reference parts and alternative options found for IS42VS16100D-75TE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42VS16100D-75TE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IS42S16100B-6T | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Integrated Silicon Solution Inc | IS42VS16100D-75TE vs IS42S16100B-6T |
| M52D16161A-10TIG | Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | Elite Semiconductor Memory Technology Inc | IS42VS16100D-75TE vs M52D16161A-10TIG |
| VG3617161ET-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | IS42VS16100D-75TE vs VG3617161ET-8 |
| UPD4516161AG5-A80L-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | IS42VS16100D-75TE vs UPD4516161AG5-A80L-9NF |
| W9816G6IH-6I | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 INCH, ROHS COMPLIANT, TSOP2-50 | Winbond Electronics Corp | IS42VS16100D-75TE vs W9816G6IH-6I |
| UPD42S16160G5-50-7JF | Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics America Inc | IS42VS16100D-75TE vs UPD42S16160G5-50-7JF |
| HM5216165TT-10H | Synchronous DRAM, 1MX16, 7.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | IS42VS16100D-75TE vs HM5216165TT-10H |
| IS42S16100E-7TL | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 | Integrated Silicon Solution Inc | IS42VS16100D-75TE vs IS42S16100E-7TL |
| IBM0316169CT3D-80 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | IBM | IS42VS16100D-75TE vs IBM0316169CT3D-80 |
| SM2404T-6 | Cache DRAM, 1MX16, 4.3ns, CMOS, PDSO50, TSOP2-50 | Ramtron International Corporation | IS42VS16100D-75TE vs SM2404T-6 |