Part Details for IS43DR16160A-3DBL by Integrated Silicon Solution Inc
Overview of IS43DR16160A-3DBL by Integrated Silicon Solution Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IS43DR16160A-3DBL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | DDR DRAM, 16MX16, 0.45NS, CMOS, PBGA84 | 18 |
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$7.5000 / $15.0000 | Buy Now |
Part Details for IS43DR16160A-3DBL
IS43DR16160A-3DBL CAD Models
IS43DR16160A-3DBL Part Data Attributes
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IS43DR16160A-3DBL
Integrated Silicon Solution Inc
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Datasheet
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IS43DR16160A-3DBL
Integrated Silicon Solution Inc
DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA84,9X15,32 | |
| Pin Count | 84 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| JESD-609 Code | e1 | |
| Length | 12.5 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.33 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for IS43DR16160A-3DBL
This table gives cross-reference parts and alternative options found for IS43DR16160A-3DBL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43DR16160A-3DBL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4T56163QN-HCE60 | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | IS43DR16160A-3DBL vs K4T56163QN-HCE60 |
| HYB18T256160AFL-3S | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 12.50 X 10 MM, LEAD FREE, MO-207DK-Z, FBGA-84 | Infineon Technologies AG | IS43DR16160A-3DBL vs HYB18T256160AFL-3S |
| NT5TU16M16AG-3CI | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 0.80 MM PITCH, BGA-84 | Nanya Technology Corporation | IS43DR16160A-3DBL vs NT5TU16M16AG-3CI |
| EM68A16CWQB-3H | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Etron Technology Inc | IS43DR16160A-3DBL vs EM68A16CWQB-3H |
| HYB18T256160AF-3S | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | IS43DR16160A-3DBL vs HYB18T256160AF-3S |
| H5PS2562GFR-Y5L | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 7.50 X 12.50 MM, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | SK Hynix Inc | IS43DR16160A-3DBL vs H5PS2562GFR-Y5L |
| HYB18T256160AF-3S | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Infineon Technologies AG | IS43DR16160A-3DBL vs HYB18T256160AF-3S |
| EDE2516ABSE-6E-E | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Elpida Memory Inc | IS43DR16160A-3DBL vs EDE2516ABSE-6E-E |
| HY5PS561621AFP-Y5 | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | SK Hynix Inc | IS43DR16160A-3DBL vs HY5PS561621AFP-Y5 |
| EDE2516ACSE-6C-E | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Elpida Memory Inc | IS43DR16160A-3DBL vs EDE2516ACSE-6C-E |