Datasheets
IS43LR16320C-6BL by: Integrated Silicon Solution Inc

DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, MO-207, TFBGA-60

Part Details for IS43LR16320C-6BL by Integrated Silicon Solution Inc

Overview of IS43LR16320C-6BL by Integrated Silicon Solution Inc

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Price & Stock for IS43LR16320C-6BL

Part # Distributor Description Stock Price Buy
DISTI # 29X5233
Newark 512M, 1.8V, Mobile Ddr, 32Mx16, 166Mhz, 60 Ball Bga (8Mm X 10Mm) Rohs |Integrated Silicon Solution (Issi) IS43LR16320C-6BL RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $4.9900
  • 500 $4.8500
$4.8500 / $4.9900 Buy Now
DISTI # IS43LR16320C-6BL-ND
DigiKey IC DRAM 512MBIT PAR 60TFBGA Min Qty: 300 Lead time: 8 Weeks Container: Tray Temporarily Out of Stock
  • 300 $5.5848
$5.5848 Buy Now
DISTI # IS43LR16320C-6BL
Avnet Americas DRAM Chip Mobile DDR SDRAM 512M-Bit 32M x 16 1.8V 60-Pin TFBGA - Bulk (Alt: IS43LR16320C-6BL) RoHS: Not Compliant Min Qty: 300 Package Multiple: 300 Lead time: 10 Weeks, 0 Days Container: Bulk 0
  • 300 $5.1255
$5.1255 Buy Now
DISTI # 870-IS43LR16320C-6BL
Mouser Electronics DRAM 512M, 1.8V, Mobile DDR, 32Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS RoHS: Compliant 0
  • 300 $5.4200
  • 600 $5.1500
  • 1,200 $4.9700
$4.9700 / $5.4200 Order Now
DISTI # IS43LR16320C-6BL
Avnet Asia DRAM Chip Mobile DDR SDRAM 512M-Bit 32M x 16 1.8V 60-Pin TFBGA (Alt: IS43LR16320C-6BL) RoHS: Compliant Min Qty: 900 Package Multiple: 300 Lead time: 12 Weeks, 0 Days 0
RFQ

Part Details for IS43LR16320C-6BL

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IS43LR16320C-6BL Part Data Attributes

IS43LR16320C-6BL Integrated Silicon Solution Inc
Buy Now Datasheet
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IS43LR16320C-6BL Integrated Silicon Solution Inc DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, MO-207, TFBGA-60
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Package Description TFBGA, BGA60,9X10,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Factory Lead Time 10 Weeks
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 167 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8,16
JESD-30 Code R-PBGA-B60
Length 10 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,9X10,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.1 mm
Self Refresh YES
Sequential Burst Length 2,4,8,16
Standby Current-Max 0.0003 A
Supply Current-Max 0.11 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for IS43LR16320C-6BL

This table gives cross-reference parts and alternative options found for IS43LR16320C-6BL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43LR16320C-6BL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4H511638B-GLB30 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60 Samsung Semiconductor IS43LR16320C-6BL vs K4H511638B-GLB30
MT46H32M16LGCK-75LIT DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 10 X 11.5 MM, LEAD FREE, PLASTIC, VFBGA-60 Micron Technology Inc IS43LR16320C-6BL vs MT46H32M16LGCK-75LIT
K4H511638G-LCC00 DDR DRAM, 32MX16, 0.55ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor IS43LR16320C-6BL vs K4H511638G-LCC00
MT46V32M16FN-75E:F DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc IS43LR16320C-6BL vs MT46V32M16FN-75E:F
MT46HC32M16LGBF-54L:B DDR DRAM, 32MX16, 5.4ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc IS43LR16320C-6BL vs MT46HC32M16LGBF-54L:B
V58C2512164SBLJ5I DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc IS43LR16320C-6BL vs V58C2512164SBLJ5I
HY5MS7B6LFP-S DDR DRAM, 32MX16, 7ns, CMOS, PBGA60, 10 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-60 SK Hynix Inc IS43LR16320C-6BL vs HY5MS7B6LFP-S
H5MS5162DFR-J3M DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA60, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-60 SK Hynix Inc IS43LR16320C-6BL vs H5MS5162DFR-J3M
V58C2512164SDUJ4 DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc IS43LR16320C-6BL vs V58C2512164SDUJ4
MT46V32M16FN-75ZL DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc IS43LR16320C-6BL vs MT46V32M16FN-75ZL

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