Datasheets
IS43R16320F-6BLI by: Integrated Silicon Solution Inc

DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60

Part Details for IS43R16320F-6BLI by Integrated Silicon Solution Inc

Overview of IS43R16320F-6BLI by Integrated Silicon Solution Inc

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Price & Stock for IS43R16320F-6BLI

Part # Distributor Description Stock Price Buy
DISTI # IS43R16320F-6BLI-ND
DigiKey IC DRAM 512MBIT PAR 60TFBGA Min Qty: 190 Lead time: 8 Weeks Container: Tray Temporarily Out of Stock
  • 190 $5.7751
$5.7751 Buy Now
DISTI # IS43R16320F-6BLI
Avnet Americas DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 60-Pin TWBGA - Trays (Alt: IS43R16320F-6BLI) RoHS: Compliant Min Qty: 190 Package Multiple: 190 Lead time: 8 Weeks, 0 Days Container: Tray 0
  • 190 $5.4621
  • 380 $5.3193
  • 760 $5.0694
  • 1,140 $4.9266
  • 1,520 $4.7481
  • 1,900 $4.6053
  • 19,000 $4.4625
$4.4625 / $5.4621 Buy Now
DISTI # 870-IS43R16320F-6BLI
Mouser Electronics DRAM 512M, 2.5V, DDR 32Mx16, 166MHz, 60 ball BGA (8mmx13mm) RoHS, IT RoHS: Compliant 0
  • 1 $6.9600
  • 10 $6.4100
  • 25 $6.2700
  • 100 $5.6100
  • 190 $5.5600
  • 570 $5.4400
  • 1,140 $5.3500
$5.3500 / $6.9600 Order Now
DISTI # IS43R16320F-6BLI
Avnet Silica DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 60-Pin TWBGA (Alt: IS43R16320F-6BLI) RoHS: Compliant Min Qty: 190 Package Multiple: 190 Lead time: 14 Weeks, 0 Days Silica - 0
Buy Now

Part Details for IS43R16320F-6BLI

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IS43R16320F-6BLI Part Data Attributes:

IS43R16320F-6BLI Integrated Silicon Solution Inc
Buy Now Datasheet
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IS43R16320F-6BLI Integrated Silicon Solution Inc DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Package Description TBGA,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Factory Lead Time 8 Weeks
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60
Length 13 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for IS43R16320F-6BLI

This table gives cross-reference parts and alternative options found for IS43R16320F-6BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43R16320F-6BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS43R16320F-6BL-TR DDR DRAM, Integrated Silicon Solution Inc IS43R16320F-6BLI vs IS43R16320F-6BL-TR
IS43R16320F-6BLI-TR DDR DRAM, Integrated Silicon Solution Inc IS43R16320F-6BLI vs IS43R16320F-6BLI-TR
IS43R16320F-6BL DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60 Integrated Silicon Solution Inc IS43R16320F-6BLI vs IS43R16320F-6BL
Part Number Description Manufacturer Compare
V58C2512164SFLJ5I DDR DRAM, ProMOS Technologies Inc IS43R16320F-6BLI vs V58C2512164SFLJ5I
SCB25D512160AF-6B DDR DRAM, Xi'an UniIC Semiconductors Co Ltd IS43R16320F-6BLI vs SCB25D512160AF-6B
IS43R16320E-5BL-TR DDR DRAM, Integrated Silicon Solution Inc IS43R16320F-6BLI vs IS43R16320E-5BL-TR
MT46V32M16CY-5BL:J DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc IS43R16320F-6BLI vs MT46V32M16CY-5BL:J
K4H511638F-LB300 DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor IS43R16320F-6BLI vs K4H511638F-LB300
SCB25D512160AF-6BI DDR DRAM, Xi'an UniIC Semiconductors Co Ltd IS43R16320F-6BLI vs SCB25D512160AF-6BI
V58C2512164SFLI75I DDR DRAM, ProMOS Technologies Inc IS43R16320F-6BLI vs V58C2512164SFLI75I
IS43R16320F-6TLI-TR DDR DRAM, Integrated Silicon Solution Inc IS43R16320F-6BLI vs IS43R16320F-6TLI-TR
SCX25D512160AE-5BI DDR DRAM, Xi'an UniIC Semiconductors Co Ltd IS43R16320F-6BLI vs SCX25D512160AE-5BI
IS43R16320F-4BL DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, FBGA-60 Integrated Silicon Solution Inc IS43R16320F-6BLI vs IS43R16320F-4BL

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