Datasheets
IS43R16800E-6TLI by: Integrated Silicon Solution Inc

DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66

Part Details for IS43R16800E-6TLI by Integrated Silicon Solution Inc

Overview of IS43R16800E-6TLI by Integrated Silicon Solution Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Price & Stock for IS43R16800E-6TLI

Part # Distributor Description Stock Price Buy
DISTI # IS43R16800E-6TLI-ND
DigiKey IC DRAM 128MBIT PAR 66TSOP II Lead time: 8 Weeks Container: Tray Temporarily Out of Stock
Buy Now
DISTI # 870-IS43R16800E-6TLI
Mouser Electronics DRAM 128M (8Mx16) 166MHz 2.5v DDR SDRAM RoHS: Compliant 39
  • 1 $3.0300
  • 10 $2.7300
  • 108 $2.3700
  • 216 $2.2300
  • 540 $2.2200
  • 1,080 $2.1600
  • 2,592 $2.1400
$2.1400 / $3.0300 Buy Now
DISTI # IS43R16800E-6TLI
TME IC: DRAM memory, 512MbDRAM, 8Mx16bit, 166MHz, 6ns, TSOP66 II, tube Min Qty: 1 0
  • 1 $4.2800
  • 5 $4.1300
  • 25 $3.6900
$3.6900 / $4.2800 RFQ
DISTI # IS43R16800E-6TLI
Avnet Silica DRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II (Alt: IS43R16800E-6TLI) RoHS: Compliant Min Qty: 324 Package Multiple: 324 Lead time: 2 Weeks, 4 Days Silica - 0
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Part Details for IS43R16800E-6TLI

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IS43R16800E-6TLI Part Data Attributes

IS43R16800E-6TLI Integrated Silicon Solution Inc
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IS43R16800E-6TLI Integrated Silicon Solution Inc DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Package Description TSSOP, TSSOP66,.46
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Factory Lead Time 20 Weeks
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 167 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.003 A
Supply Current-Max 0.22 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for IS43R16800E-6TLI

This table gives cross-reference parts and alternative options found for IS43R16800E-6TLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43R16800E-6TLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS43R16800E-6TL DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 Integrated Silicon Solution Inc IS43R16800E-6TLI vs IS43R16800E-6TL
Part Number Description Manufacturer Compare
HY5DU1291622ALTC-80 DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc IS43R16800E-6TLI vs HY5DU1291622ALTC-80
K4D261638F-TC500 Synchronous Graphics RAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor IS43R16800E-6TLI vs K4D261638F-TC500
MT46V8M16P-5BL DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc IS43R16800E-6TLI vs MT46V8M16P-5BL
NT5DS8M16HS-5TI DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Nanya Technology Corporation IS43R16800E-6TLI vs NT5DS8M16HS-5TI
HY5DU281622DLT-D43 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc IS43R16800E-6TLI vs HY5DU281622DLT-D43
HY5DU1291622TC-8 DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc IS43R16800E-6TLI vs HY5DU1291622TC-8
NT5DS8M16FT-5TI DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Nanya Technology Corporation IS43R16800E-6TLI vs NT5DS8M16FT-5TI
MT46V8M16P-75EIT DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc IS43R16800E-6TLI vs MT46V8M16P-75EIT
MT46V8M16P-75IT:A DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc IS43R16800E-6TLI vs MT46V8M16P-75IT:A
HY5DU1291622BLTC-75 DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc IS43R16800E-6TLI vs HY5DU1291622BLTC-75

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