Part Details for IXFH80N65X2 by Littelfuse Inc
Overview of IXFH80N65X2 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for IXFH80N65X2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFH80N65X2-ND
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DigiKey | MOSFET N-CH 650V 80A TO247 Min Qty: 1 Lead time: 26 Weeks Container: Tube |
2513 In Stock |
|
$8.6991 / $15.6200 | Buy Now |
DISTI #
C1S331700121901
|
Chip1Stop | DiscMSFT NChUltraJnctn X2Class TO-247AD | 300 |
|
$9.8500 / $18.5000 | Buy Now |
Part Details for IXFH80N65X2
IXFH80N65X2 CAD Models
IXFH80N65X2 Part Data Attributes
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IXFH80N65X2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH80N65X2
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.038 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.6 pF | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 890 W | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFH80N65X2
This table gives cross-reference parts and alternative options found for IXFH80N65X2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH80N65X2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT77N60BC6 | Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXFH80N65X2 vs APT77N60BC6 |
APT77N60SC6 | Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Microsemi Corporation | IXFH80N65X2 vs APT77N60SC6 |
IXFH80N65X2 | Power Field-Effect Transistor, | IXYS Corporation | IXFH80N65X2 vs IXFH80N65X2 |
SIHG73N60E-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | IXFH80N65X2 vs SIHG73N60E-E3 |