Part Details for IXFK25N90 by IXYS Corporation
Overview of IXFK25N90 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFK25N90
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFK25N90
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Mouser Electronics | MOSFET 25 Amps 900V 0.33 Rds RoHS: Compliant | 0 |
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Part Details for IXFK25N90
IXFK25N90 CAD Models
IXFK25N90 Part Data Attributes
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IXFK25N90
IXYS Corporation
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Datasheet
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IXFK25N90
IXYS Corporation
Power Field-Effect Transistor, 25A I(D), 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-264 | |
| Package Description | TO-264, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.33 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 560 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFK25N90
This table gives cross-reference parts and alternative options found for IXFK25N90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK25N90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFN25N90 | Power Field-Effect Transistor, 25A I(D), 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFK25N90 vs IXFN25N90 |
| IXFK24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFK25N90 vs IXFK24N90Q |
| IXFK24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXFK25N90 vs IXFK24N90Q |
| IXFX25N90 | Power Field-Effect Transistor, 25A I(D), 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | IXFK25N90 vs IXFX25N90 |
| IXFN27N80Q | Power Field-Effect Transistor, 27A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFK25N90 vs IXFN27N80Q |
| STW21N90K5 | N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in TO-247 package | STMicroelectronics | IXFK25N90 vs STW21N90K5 |
| APT8028JVR | Power Field-Effect Transistor, 28A I(D), 800V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Microsemi Corporation | IXFK25N90 vs APT8028JVR |
| IXFN27N80 | Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFK25N90 vs IXFN27N80 |
| IXFX24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | Littelfuse Inc | IXFK25N90 vs IXFX24N90Q |