Part Details for IXFN25N90 by IXYS Corporation
Overview of IXFN25N90 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXFN25N90
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFN25N90
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Mouser Electronics | Discrete Semiconductor Modules 25 Amps 900V 0.33 Rds RoHS: Compliant | 0 |
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Part Details for IXFN25N90
IXFN25N90 CAD Models
IXFN25N90 Part Data Attributes:
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IXFN25N90
IXYS Corporation
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Datasheet
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IXFN25N90
IXYS Corporation
Power Field-Effect Transistor, 25A I(D), 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.33 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 600 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN25N90
This table gives cross-reference parts and alternative options found for IXFN25N90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN25N90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFN27N80Q | Power Field-Effect Transistor, 27A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN25N90 vs IXFN27N80Q |
| IXFN39N90 | Power Field-Effect Transistor, 39A I(D), 900V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN25N90 vs IXFN39N90 |
| IXFK26N90 | Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | IXFN25N90 vs IXFK26N90 |
| IXFN27N80 | Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN25N90 vs IXFN27N80 |
| IXFX26N90 | Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | IXFN25N90 vs IXFX26N90 |
| IXFX24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | Littelfuse Inc | IXFN25N90 vs IXFX24N90Q |
| IXFK24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFN25N90 vs IXFK24N90Q |
| IXFN26N90 | Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN25N90 vs IXFN26N90 |
| IXFK24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXFN25N90 vs IXFK24N90Q |
| IXFK25N90 | Power Field-Effect Transistor, 25A I(D), 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | IXFN25N90 vs IXFK25N90 |