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Transistors Power Field-Effect Transistors IXFX64N60P

IXFX64N60P
Description: Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN

Overview of IXFX64N60P by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Electronic Manufacturing

Price & Stock for IXFX64N60P by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXFX64N60P
Mouser Electronics MOSFETs MOSFET RoHS: Compliant 619
  • 1 $17.5200
  • 10 $14.4700
  • 30 $14.4600
  • 60 $13.7700
$13.7700 / $17.5200 Buy Now
Future Electronics N-Channel 600 V 1040 W 200 nC PolarHV HiPerFET Mosfet Through Hole - PLUS-247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 46 Weeks Container: Tube 0
Tube
  • 1 $15.0500
  • 5 $14.8500
  • 25 $14.6600
  • 50 $14.5700
  • 150 $14.3300
$14.3300 / $15.0500 Buy Now
Future Electronics N-Channel 600 V 1040 W 200 nC PolarHV HiPerFET Mosfet Through Hole - PLUS-247 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 46 Weeks Container: Bulk 0
Bulk
  • 1 $15.0500
  • 5 $14.8500
  • 25 $14.6600
  • 50 $14.5700
  • 150 $14.3300
$14.3300 / $15.0500 Buy Now
DISTI # IXFX64N60P
TTI MOSFETs MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $13.7700
$13.7700 Buy Now
DISTI # IXFX64N60P
TME Transistor: N-MOSFET, unipolar, 600V, 64A, 1040W, PLUS247™ Min Qty: 1 0
  • 1 $24.8900
  • 3 $22.4400
  • 10 $19.9800
  • 30 $17.8600
$17.8600 / $24.8900 RFQ

CAD Models for IXFX64N60P by IXYS Corporation
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Part Data Attributes for IXFX64N60P by IXYS Corporation
Parametric Data

IXFX64N60P
IXYS Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Package Description
PLUS247, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
3500 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
64 A
Drain-source On Resistance-Max
0.096 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
150 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN SILVER COPPER
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXFX64N60P
    IXYS Corporation
    Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN
    VS

Alternate Parts for IXFX64N60P

This table gives cross-reference parts and alternative options found for IXFX64N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX64N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXFX64N60Q3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IXFX64N60P vs IXFX64N60Q3
IXFX64N60P3 Power Field-Effect Transistor, Littelfuse Inc IXFX64N60P vs IXFX64N60P3
IXFX64N60P3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IXFX64N60P vs IXFX64N60P3
Part Number Description Manufacturer Compare
IXFK64N60P Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IXYS Corporation IXFX64N60P vs IXFK64N60P
IXFK64N60P3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 IXYS Corporation IXFX64N60P vs IXFK64N60P3
IXFX64N60P Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Littelfuse Inc IXFX64N60P vs IXFX64N60P
IXFX64N60P3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IXFX64N60P vs IXFX64N60P3
IXFK64N60P3 Power Field-Effect Transistor, Littelfuse Inc IXFX64N60P vs IXFK64N60P3
APT66M60L Power Field-Effect Transistor, 70A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc IXFX64N60P vs APT66M60L
IXFB70N60Q2 Power Field-Effect Transistor, 70A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS-264, 3 PIN Littelfuse Inc IXFX64N60P vs IXFB70N60Q2
IXFK64N60Q3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 IXYS Corporation IXFX64N60P vs IXFK64N60Q3
IXFX64N60Q3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IXFX64N60P vs IXFX64N60Q3
IXFX64N60P3 Power Field-Effect Transistor, Littelfuse Inc IXFX64N60P vs IXFX64N60P3

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