Part Details for IXTP1R4N100P by Littelfuse Inc
Overview of IXTP1R4N100P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for IXTP1R4N100P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
03AH1619
|
Newark | Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/ Tube |Littelfuse IXTP1R4N100P Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.5300 / $2.1800 | Buy Now |
|
DISTI #
IXTP1R4N100P-ND
|
DigiKey | MOSFET N-CH 1000V 1.4A TO220AB Min Qty: 300 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
|
$1.9175 | Buy Now |
Part Details for IXTP1R4N100P
IXTP1R4N100P CAD Models
IXTP1R4N100P Part Data Attributes
|
|
IXTP1R4N100P
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXTP1R4N100P
Littelfuse Inc
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 1.4 A | |
| Drain-source On Resistance-Max | 11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 63 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTP1R4N100P
This table gives cross-reference parts and alternative options found for IXTP1R4N100P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP1R4N100P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTT1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXTP1R4N100P vs IXTT1N100 |
| IXTH1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | IXYS Corporation | IXTP1R4N100P vs IXTH1N100 |
| IXTY1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, 3 PIN | IXYS Corporation | IXTP1R4N100P vs IXTY1R4N100P |
| IXTP1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | IXTP1R4N100P vs IXTP1R4N100P |
| IXTT1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTP1R4N100P vs IXTT1N100 |
| IXTA1N100 | Power Field-Effect Transistor, | Littelfuse Inc | IXTP1R4N100P vs IXTA1N100 |
| IXTA1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTP1R4N100P vs IXTA1R4N100P |
| IXTH1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | Littelfuse Inc | IXTP1R4N100P vs IXTH1N100 |
| IXTP1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXTP1R4N100P vs IXTP1N100 |
| IXTA1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, TO-263AA, 3 PIN | IXYS Corporation | IXTP1R4N100P vs IXTA1N100 |