Part Details for IXTH1N100 by Littelfuse Inc
Overview of IXTH1N100 by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IXTH1N100
IXTH1N100 CAD Models
IXTH1N100 Part Data Attributes
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IXTH1N100
Littelfuse Inc
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Datasheet
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IXTH1N100
Littelfuse Inc
Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 1.5 A | |
Drain-source On Resistance-Max | 11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTH1N100
This table gives cross-reference parts and alternative options found for IXTH1N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH1N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTA1N100 | Power Field-Effect Transistor, | Littelfuse Inc | IXTH1N100 vs IXTA1N100 |
IXTT1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTH1N100 vs IXTT1N100 |
IXTA1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTH1N100 vs IXTA1R4N100P |
IXTA1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTH1N100 vs IXTA1R4N100P |
IXTY1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, 3 PIN | Littelfuse Inc | IXTH1N100 vs IXTY1R4N100P |
IXTY1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, 3 PIN | IXYS Corporation | IXTH1N100 vs IXTY1R4N100P |
IXTP1N100 | Power Field-Effect Transistor, | Littelfuse Inc | IXTH1N100 vs IXTP1N100 |
IXTP1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXTH1N100 vs IXTP1N100 |
IXTT1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXTH1N100 vs IXTT1N100 |