Part Details for IXTP1N100 by IXYS Corporation
Overview of IXTP1N100 by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXTP1N100
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTP1N100-ND
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DigiKey | MOSFET N-CH 1000V 1.5A TO220AB Min Qty: 300 Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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$2.5240 | Buy Now |
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DISTI #
747-IXTP1N100
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Mouser Electronics | MOSFETs 1.5 Amps 1000V 11 Rds RoHS: Compliant | 0 |
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Order Now | |
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Bristol Electronics | 100 |
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RFQ |
Part Details for IXTP1N100
IXTP1N100 CAD Models
IXTP1N100 Part Data Attributes
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IXTP1N100
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTP1N100
IXYS Corporation
Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 54 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTP1N100
This table gives cross-reference parts and alternative options found for IXTP1N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP1N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTA1N100 | Power Field-Effect Transistor, | Littelfuse Inc | IXTP1N100 vs IXTA1N100 |
| IXTT1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTP1N100 vs IXTT1N100 |
| IXTA1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTP1N100 vs IXTA1R4N100P |
| IXTA1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTP1N100 vs IXTA1R4N100P |
| IXTH1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | Littelfuse Inc | IXTP1N100 vs IXTH1N100 |
| IXTY1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, 3 PIN | Littelfuse Inc | IXTP1N100 vs IXTY1R4N100P |
| IXTY1R4N100P | Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, 3 PIN | IXYS Corporation | IXTP1N100 vs IXTY1R4N100P |
| IXTP1N100 | Power Field-Effect Transistor, | Littelfuse Inc | IXTP1N100 vs IXTP1N100 |
| IXTT1N100 | Power Field-Effect Transistor, 1.5A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXTP1N100 vs IXTT1N100 |