Datasheets
JAN1N3614US by: Microsemi Corporation

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2

Part Details for JAN1N3614US by Microsemi Corporation

Overview of JAN1N3614US by Microsemi Corporation

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Part Details for JAN1N3614US

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JAN1N3614US Part Data Attributes:

JAN1N3614US Microsemi Corporation
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JAN1N3614US Microsemi Corporation Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Part Package Code MELF
Package Description O-LELF-R2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
JESD-30 Code O-LELF-R2
JESD-609 Code e0
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Output Current-Max 1 A
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Qualification Status Not Qualified
Reference Standard MIL-19500/286
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND
Terminal Position END

Alternate Parts for JAN1N3614US

This table gives cross-reference parts and alternative options found for JAN1N3614US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N3614US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1N5621US Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 Sensitron Semiconductors JAN1N3614US vs 1N5621US
EGL41GHE3 DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC, GL41, 2 PIN, Signal Diode Vishay Semiconductors JAN1N3614US vs EGL41GHE3
BYM13-30-E3/97 Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N3614US vs BYM13-30-E3/97
1N5621USS Rectifier Diode, 1 Element, 1A, Silicon, Sensitron Semiconductors JAN1N3614US vs 1N5621USS
JAN1N5621US Rectifier Diode, 1 Phase, 1 Element, 1A, Silicon Microchip Technology Inc JAN1N3614US vs JAN1N5621US
SGL41-30 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, General Instrument Corp JAN1N3614US vs SGL41-30
SGL41-30-E3/96 Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N3614US vs SGL41-30-E3/96
1N5621UV Rectifier Diode, 1 Element, 1A, Silicon, Sensitron Semiconductors JAN1N3614US vs 1N5621UV
EGL41D-E3/96 Rectifier Diode, 1 Phase, 1 Element, 1A, 200V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N3614US vs EGL41D-E3/96
BYM12-300 Rectifier Diode, 1 Element, 0.5A, 300V V(RRM), Silicon, DO-213AB, General Instrument Corp JAN1N3614US vs BYM12-300
Part Number Description Manufacturer Compare
JANTX1N5621US Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 Sensitron Semiconductors JAN1N3614US vs JANTX1N5621US
JANTXV1N5621US Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 Sensitron Semiconductors JAN1N3614US vs JANTXV1N5621US
1N5621UV Rectifier Diode, 1 Element, 1A, Silicon, Sensitron Semiconductors JAN1N3614US vs 1N5621UV
EGL41D Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-213AB, DO-213AB, 2 PIN International Semiconductor Inc JAN1N3614US vs EGL41D
EGL41C-E3/97 Rectifier Diode, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N3614US vs EGL41C-E3/97
BYM12-400HE3_A/I Rectifier Diode, Vishay Intertechnologies JAN1N3614US vs BYM12-400HE3_A/I
BYM13-30-E3/96 Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JAN1N3614US vs BYM13-30-E3/96
LL4937 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-213AB, GLASS, LL-41, MELF-2 Bkc Semiconductors Inc JAN1N3614US vs LL4937
SGL41-30 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, General Instrument Corp JAN1N3614US vs SGL41-30
BYM12-300HE3_A/I Rectifier Diode, Vishay Intertechnologies JAN1N3614US vs BYM12-300HE3_A/I

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