Part Details for JAN1N4247 by Semtech Corporation
Results Overview of JAN1N4247 by Semtech Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
JAN1N4247 Information
JAN1N4247 by Semtech Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for JAN1N4247
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JAN1N4247S-ND
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DigiKey | DIODE STANDARD 600V 1A AXIAL Lead time: 14 Weeks Container: Bulk | Limited Supply - Call |
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Buy Now |
US Tariff Estimator: JAN1N4247 by Semtech Corporation
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for JAN1N4247
JAN1N4247 Part Data Attributes
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JAN1N4247
Semtech Corporation
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Datasheet
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Compare Parts:
JAN1N4247
Semtech Corporation
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
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| Part Life Cycle Code | Transferred | |
| Package Description | Hermetic Sealed Package-2 | |
| Pin Count | 2 | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Factory Lead Time | 24 Weeks | |
| Application | General Purpose | |
| Case Connection | Isolated | |
| Configuration | Single | |
| Diode Element Material | Silicon | |
| Diode Type | Rectifier Diode | |
| Forward Voltage-Max (VF) | 1.2 V | |
| JESD-30 Code | O-LALF-W2 | |
| Non-rep Pk Forward Current-Max | 25 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -65 °C | |
| Output Current-Max | 1 A | |
| Package Body Material | Unspecified | |
| Package Shape | Round | |
| Package Style | Long Form | |
| Qualification Status | Qualified | |
| Reference Standard | Mil-19500/286 | |
| Rep Pk Reverse Voltage-Max | 600 V | |
| Reverse Recovery Time-Max | 2 µS | |
| Surface Mount | No | |
| Terminal Form | Wire | |
| Terminal Position | Axial |
Alternate Parts for JAN1N4247
This table gives cross-reference parts and alternative options found for JAN1N4247. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N4247, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTXV1N4247 | Unitrode Corporation | Check for Price | Rectifier Diode, Avalanche, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2 | JAN1N4247 vs JANTXV1N4247 |
JAN1N4247 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the JAN1N4247 is -55°C to +150°C, although it can withstand storage temperatures from -65°C to +200°C.
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To ensure proper biasing, the JAN1N4247 requires a minimum of 10V reverse bias voltage (VR) and a maximum of 40V forward bias voltage (VF). Additionally, the device should be operated within the recommended current limits to prevent overheating.
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The typical recovery time for the JAN1N4247 after a surge event is around 100ns to 1μs, depending on the magnitude and duration of the surge. However, this can vary depending on the specific application and operating conditions.
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Yes, the JAN1N4247 can be used in high-frequency applications up to 1GHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit to ensure optimal performance.
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To prevent ESD damage, it's recommended to handle the JAN1N4247 with ESD-safe materials, wear an ESD strap, and use ESD-protected workstations. Additionally, the device should be stored in an ESD-protected package when not in use.