Part Details for JAN1N5809US by Microsemi Corporation
Overview of JAN1N5809US by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JAN1N5809US
JAN1N5809US CAD Models
JAN1N5809US Part Data Attributes
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JAN1N5809US
Microsemi Corporation
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Datasheet
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JAN1N5809US
Microsemi Corporation
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | HERMETIC SEALED, GLASS, D-5B, 2 PIN | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Samacsys Manufacturer | Microsemi Corporation | |
Additional Feature | HIGH RELIABILITY | |
Application | ULTRA FAST RECOVERY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 0.875 V | |
JESD-30 Code | O-LELF-R2 | |
JESD-609 Code | e0 | |
Non-rep Pk Forward Current-Max | 125 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 3 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Power Dissipation-Max | 5 W | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-19500/477 | |
Rep Pk Reverse Voltage-Max | 100 V | |
Reverse Recovery Time-Max | 0.03 µs | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | WRAP AROUND | |
Terminal Position | END |
Alternate Parts for JAN1N5809US
This table gives cross-reference parts and alternative options found for JAN1N5809US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N5809US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1N5809US | 3A, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN1N5809US vs 1N5809US |
JANS1N5809US | Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 | Microsemi Corporation | JAN1N5809US vs JANS1N5809US |
JANS1N5809US | Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, | Sensitron Semiconductors | JAN1N5809US vs JANS1N5809US |
JANS1N5809US | Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | Semtech Corporation | JAN1N5809US vs JANS1N5809US |
JANTX1N5809US | Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | Semtech Corporation | JAN1N5809US vs JANTX1N5809US |
1N5809US | Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | Semtech Corporation | JAN1N5809US vs 1N5809US |
1N5809USS | Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, | Sensitron Semiconductors | JAN1N5809US vs 1N5809USS |
JANTXV1N5809US | Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 | Microsemi Corporation | JAN1N5809US vs JANTXV1N5809US |
JANTXV1N5809US | Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, MELF-B, 2 PIN | Sensitron Semiconductors | JAN1N5809US vs JANTXV1N5809US |
JANTXV1N5809US | Rectifier Diode, 1 Phase, 1 Element, 1.7A, 100V V(RRM), Silicon, | Micross Components | JAN1N5809US vs JANTXV1N5809US |