Parametric results for: JAN1N5809US under Rectifier Diodes
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JAN1N5809US
Microchip Technology Inc
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$8.2755 | No | Active | 3 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5B, 2 PIN | compliant | ||||||||||
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JAN1N5809US
Semtech Corporation
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$28.6700 | Transferred | 6 A | 875 mV | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | SEMTECH | ||||||||||||||
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JAN1N5809US
MACOM
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Check for Price | Transferred | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.80 | |||||||||||||||||
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JAN1N5809US
Micross Components
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Check for Price | Active | 6 A | 875 mV | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSS COMPONENTS | unknown | |||||||||||||||||
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JAN1N5809US
VPT Components
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Check for Price | No | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | VPT COMPONENTS | compliant | EAR99 | 8541.10.00.80 | ||||||||||||||
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JAN1N5809US
Microsemi Corporation
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Check for Price | No | No | Transferred | 3 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, D-5B, 2 PIN | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | 2 | |||||
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JAN1N5809US
Defense Logistics Agency
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Check for Price | Active | 6 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | unknown | ||||||||||||||||||||
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JAN1N5809US
Bkc Semiconductors Inc
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Check for Price | No | Obsolete | 6 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH SURGE CAPABILITY | FAST RECOVERY | 125 A | 1 | Not Qualified | O-MELF-R2 | e0 | MIL-19500/477 | 175 °C | ISOLATED | 2 | METAL | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | BKC SEMICONDUCTORS INC | unknown | EAR99 | 8541.10.00.80 | ||||||||||
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JAN1N5809US
Sensitron Semiconductors
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Check for Price | No | No | Active | 6 A | 875 mV | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | E-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | MELF-B, 2 PIN | compliant | EAR99 | 8541.10.00.80 | 2 | MELF |