Part Details for JANS2N5154U3 by VPT Components
Results Overview of JANS2N5154U3 by VPT Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (9 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANS2N5154U3 Information
JANS2N5154U3 by VPT Components is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANS2N5154U3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANS2N5154U3
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Avnet Americas | Power Transistor NPN Surface Mount U3 - Bulk (Alt: JANS2N5154U3) COO: United States of America (the) RoHS: Not Compliant Min Qty: 7 Package Multiple: 1 Container: Bulk | 0 |
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$184.1438 / $196.9538 | Buy Now |
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DISTI #
JANS2N5154U3
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Avnet Americas | Power Transistor NPN Surface Mount U3 - Bulk (Alt: JANS2N5154U3) COO: United States of America (the) RoHS: Not Compliant Min Qty: 7 Package Multiple: 1 Container: Bulk | 0 |
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$184.1438 / $196.9538 | Buy Now |
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DISTI #
JANS2N5154U3
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TTI | Bipolar Transistors - BJT MIL-PRF-19500/544 RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Waffle | Americas - 0 |
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$228.7600 | Buy Now |
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NexGen Digital | 8 |
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RFQ |
Part Details for JANS2N5154U3
JANS2N5154U3 CAD Models
JANS2N5154U3 Part Data Attributes
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JANS2N5154U3
VPT Components
Buy Now
Datasheet
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Compare Parts:
JANS2N5154U3
VPT Components
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | High Reliability | |
| Case Connection | Collector | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Base Capacitance-Max | 250 Pf | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | Single | |
| DC Current Gain-Min (hFE) | 40 | |
| Fall Time-Max (tf) | 500 Ns | |
| JESD-30 Code | R-XBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | Unspecified | |
| Package Shape | Rectangular | |
| Package Style | Chip Carrier | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | Npn | |
| Power Dissipation-Max (Abs) | 100 W | |
| Qualification Status | Qualified | |
| Reference Standard | Mil-Prf-19500 | |
| Surface Mount | Yes | |
| Terminal Form | No Lead | |
| Terminal Position | Bottom | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 1500 Ns | |
| Turn-on Time-Max (ton) | 500 Ns | |
| VCEsat-Max | 1.5 V |
Alternate Parts for JANS2N5154U3
This table gives cross-reference parts and alternative options found for JANS2N5154U3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANS2N5154U3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N5154U3 | MACOM | Check for Price | Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | JANS2N5154U3 vs 2N5154U3 |
| JANSL2N5154U3 | Microsemi Corporation (now Microchip) | Check for Price | Small Signal Bipolar Transistor, | JANS2N5154U3 vs JANSL2N5154U3 |
| JANSD2N5154U3 | Microchip Technology Inc | Check for Price | RH Power BJT _ U3 | JANS2N5154U3 vs JANSD2N5154U3 |
| JANSP2N5154U3 | Microchip Technology Inc | Check for Price | RH Power BJT _ U3 | JANS2N5154U3 vs JANSP2N5154U3 |
| JANSF2N5154U3 | Microchip Technology Inc | Check for Price | RH Power BJT _ U3 | JANS2N5154U3 vs JANSF2N5154U3 |
| JANS2N5154U3 | Microsemi Corporation (now Microchip) | Check for Price | Power Bipolar Transistor, 2A I(C), 1-Element, NPN | JANS2N5154U3 vs JANS2N5154U3 |
| 2N5154U3 | Microsemi Corporation (now Microchip) | Check for Price | Power Bipolar Transistor, 2A I(C), 1-Element, NPN | JANS2N5154U3 vs 2N5154U3 |
| JANSR2N5154U3 | VPT Components | Check for Price | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | JANS2N5154U3 vs JANSR2N5154U3 |
| JANSM2N5154U3 | Microsemi Corporation (now Microchip) | Check for Price | Small Signal Bipolar Transistor, | JANS2N5154U3 vs JANSM2N5154U3 |
JANS2N5154U3 Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves placing the device on a thermal pad with a minimum size of 100mm², using a 2oz copper thickness, and ensuring a minimum of 10mm clearance around the device for airflow.
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To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet, and to ensure good airflow around the device.
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The recommended soldering conditions for this device are a peak temperature of 260°C, a dwell time of 10-30 seconds, and a soldering iron tip temperature of 350°C.
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Yes, the JANS2N5154U3 is a radiation-hardened device designed to meet the requirements of NASA's JANS (Janus) specification, making it suitable for use in space and other radiation-intensive applications.
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The typical lead time for delivery of this device is 12-16 weeks, but this may vary depending on the quantity and availability of the device.