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Transistors Power Field-Effect Transistors JANSR2N7262

Transistors
JANSR2N7262
Description: Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN

Overview of JANSR2N7262 by Microsemi Corporation

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Part Data Attributes for JANSR2N7262 by Microsemi Corporation
Parametric Data

JANSR2N7262
Microsemi Corporation
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICROSEMI CORP
Part Package Code
BCY
Package Description
CYLINDRICAL, O-MBCY-W3
Pin Count
2
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
5.5 A
Drain-source On Resistance-Max
0.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
Qualification Status
Qualified
Reference Standard
MIL-19500/601
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
Terminal Position
BOTTOM
Transistor Element Material
SILICON
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  1. JANSR2N7262
    Microsemi Corporation
    Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN
    VS

Alternate Parts for JANSR2N7262

This table gives cross-reference parts and alternative options found for JANSR2N7262. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N7262, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N7262 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN Microsemi Corporation JANSR2N7262 vs 2N7262
IRHF7230 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG JANSR2N7262 vs IRHF7230
IRHF7230PBF Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN International Rectifier JANSR2N7262 vs IRHF7230PBF
IRHF8230 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG JANSR2N7262 vs IRHF8230
Part Number Description Manufacturer Compare
IRHF7230PBF Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN International Rectifier JANSR2N7262 vs IRHF7230PBF
2N7262 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN Microsemi Corporation JANSR2N7262 vs 2N7262
JANSH2N7262 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG JANSR2N7262 vs JANSH2N7262

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