Datasheets
JANTXV1N6109US by:

Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon

Part Details for JANTXV1N6109US by Microchip Technology Inc

Overview of JANTXV1N6109US by Microchip Technology Inc

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Price & Stock for JANTXV1N6109US

Part # Distributor Description Stock Price Buy
DISTI # 61AJ6308
Newark Bi-Directional Tvs B-Body Sq. Melf Rohs Compliant: Yes |Microchip JANTXV1N6109US Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $19.0300
  • 500 $18.3000
$18.3000 / $19.0300 Buy Now
DISTI # JANTXV1N6109US
Avnet Americas Diode TVS Single Bi-Directional 9.9V 500W 2-Pin D-5B T/R - Bulk (Alt: JANTXV1N6109US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Container: Bulk 0
  • 1 $20.5000
  • 100 $19.0300
  • 500 $18.3000
$18.3000 / $20.5000 Buy Now
DISTI # 494-JANTXV1N6109US
Mouser Electronics ESD Suppressors / TVS Diodes Bi-Directional TVS RoHS: Not Compliant 0
  • 100 $19.0300
$19.0300 Order Now
DISTI # JANTXV1N6109US
Microchip Technology Inc Bi-Directional TVS _ B-Body Sq. Melf, Projected EOL: 2049-02-05 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $20.5000
$20.5000 Buy Now
Future Electronics   RoHS: Non Compliant pbFree: No Min Qty: 100 Package Multiple: 1 0
  • 100 $18.3000
$18.3000 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 25 $38.0600
  • 50 $23.4200
  • 75 $18.5400
  • 100 $18.1700
$18.1700 / $38.0600 Buy Now
NAC Bi-Directional TVS, B-Body Sq. Melf RoHS: Compliant Min Qty: 17 Package Multiple: 1 0
  • 1 $20.9100
  • 100 $19.2600
  • 500 $18.3000
  • 800 $17.8500
$17.8500 / $20.9100 Buy Now
Master Electronics   RoHS: Compliant 0
  • 25 $38.0600
  • 50 $23.4200
  • 75 $18.5400
  • 100 $18.1700
$18.1700 / $38.0600 Buy Now

Part Details for JANTXV1N6109US

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JANTXV1N6109US Part Data Attributes

JANTXV1N6109US Microchip Technology Inc
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JANTXV1N6109US Microchip Technology Inc Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MELF-2
Reach Compliance Code compliant
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 12.35 V
Clamping Voltage-Max 19.1 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL
Power Dissipation-Max 2 W
Qualification Status Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 9.9 V
Reverse Current-Max 20 µA
Reverse Test Voltage 9.9 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND
Terminal Position END

Alternate Parts for JANTXV1N6109US

This table gives cross-reference parts and alternative options found for JANTXV1N6109US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV1N6109US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JANTXV1N6109US vs JAN1N6109US
JANTX1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JANTXV1N6109US vs JANTX1N6109US
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JANTXV1N6109US vs JAN1N6109US
JANTX1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JANTXV1N6109US vs JANTX1N6109US
JANTXV1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors JANTXV1N6109US vs JANTXV1N6109US
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors JANTXV1N6109US vs JAN1N6109US
1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JANTXV1N6109US vs 1N6109US
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JANTXV1N6109US vs JAN1N6109US
Part Number Description Manufacturer Compare
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JANTXV1N6109US vs JAN1N6109US
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors JANTXV1N6109US vs JAN1N6109US
1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JANTXV1N6109US vs 1N6109US
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JANTXV1N6109US vs JAN1N6109US
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JANTXV1N6109US vs JAN1N6109US
JANTX1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors JANTXV1N6109US vs JANTX1N6109US
JANTX1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JANTXV1N6109US vs JANTX1N6109US
JANTXV1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors JANTXV1N6109US vs JANTXV1N6109US

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