Datasheets
K4B1G1646G-BCF8T by: Samsung Semiconductor

DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96

Part Details for K4B1G1646G-BCF8T by Samsung Semiconductor

Overview of K4B1G1646G-BCF8T by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for K4B1G1646G-BCF8T

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K4B1G1646G-BCF8T Part Data Attributes:

K4B1G1646G-BCF8T Samsung Semiconductor
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K4B1G1646G-BCF8T Samsung Semiconductor DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description FBGA, BGA96,9X16,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Time-Max 0.3 ns
Clock Frequency-Max (fCLK) 533 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B96
JESD-609 Code e3
Memory Density 1073741824 bit
Memory IC Type DDR3 DRAM
Memory Width 16
Moisture Sensitivity Level 1
Number of Terminals 96
Number of Words 67108864 words
Number of Words Code 64000000
Organization 64MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Standby Current-Max 0.01 A
Supply Current-Max 0.14 mA
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES
Technology CMOS
Terminal Finish MATTE TIN
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

Alternate Parts for K4B1G1646G-BCF8T

This table gives cross-reference parts and alternative options found for K4B1G1646G-BCF8T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4B1G1646G-BCF8T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4B1G1646G-BCF80 DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Samsung Semiconductor K4B1G1646G-BCF8T vs K4B1G1646G-BCF80
Part Number Description Manufacturer Compare
IS46TR16640A-15HBLA2 DDR DRAM, 64MX16, 13.5ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96 Integrated Silicon Solution Inc K4B1G1646G-BCF8T vs IS46TR16640A-15HBLA2
NT5CB64M16AP-DG DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-96 Nanya Technology Corporation K4B1G1646G-BCF8T vs NT5CB64M16AP-DG
NT5CB64M16AP-CG DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-96 Nanya Technology Corporation K4B1G1646G-BCF8T vs NT5CB64M16AP-CG
NT5CB64M16DP-CF DDR DRAM, 64MX16, 0.255ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 Nanya Technology Corporation K4B1G1646G-BCF8T vs NT5CB64M16DP-CF
NT5CB64M16DP-EI DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 Nanya Technology Corporation K4B1G1646G-BCF8T vs NT5CB64M16DP-EI
K4B1G1646G-BCF80 DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Samsung Semiconductor K4B1G1646G-BCF8T vs K4B1G1646G-BCF80
IDSH1G-04A1F1C-10G DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, GREEN, PLASTIC, TFBGA-96 Qimonda AG K4B1G1646G-BCF8T vs IDSH1G-04A1F1C-10G
EDJ1116BABG-AC-E DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96 Elpida Memory Inc K4B1G1646G-BCF8T vs EDJ1116BABG-AC-E
NT5CB64M16AP-DH DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-96 Nanya Technology Corporation K4B1G1646G-BCF8T vs NT5CB64M16AP-DH
IDSH1G-04A1F1C-10E DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, GREEN, PLASTIC, TFBGA-96 Qimonda AG K4B1G1646G-BCF8T vs IDSH1G-04A1F1C-10E

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