Part Details for K4B1G1646G-BCK0T by Samsung Semiconductor
Overview of K4B1G1646G-BCK0T by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for K4B1G1646G-BCK0T
K4B1G1646G-BCK0T CAD Models
K4B1G1646G-BCK0T Part Data Attributes:
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K4B1G1646G-BCK0T
Samsung Semiconductor
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Datasheet
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K4B1G1646G-BCK0T
Samsung Semiconductor
DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | FBGA, BGA96,9X16,32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Time-Max | 0.225 ns | |
| Clock Frequency-Max (fCLK) | 800 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B96 | |
| JESD-609 Code | e3 | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 1 | |
| Number of Terminals | 96 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Organization | 64MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA96,9X16,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.01 A | |
| Supply Current-Max | 0.195 mA | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM |
Alternate Parts for K4B1G1646G-BCK0T
This table gives cross-reference parts and alternative options found for K4B1G1646G-BCK0T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4B1G1646G-BCK0T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| H5TQ1G63AFP-H8C | DDR DRAM, 64MX16, 0.125ns, CMOS, PBGA96, FBGA-96 | SK Hynix Inc | K4B1G1646G-BCK0T vs H5TQ1G63AFP-H8C |
| EDJ1116DBSE-GN-F | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | K4B1G1646G-BCK0T vs EDJ1116DBSE-GN-F |
| MT41J64M16JT-15EIT:GTR | DDR DRAM, 64MX16, 0.125ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4B1G1646G-BCK0T vs MT41J64M16JT-15EIT:GTR |
| EDJ1116BBSE-GL-F | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | K4B1G1646G-BCK0T vs EDJ1116BBSE-GL-F |
| MT41J64M16JT-15EAIT:G | DDR DRAM, 64MX16, 0.255ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4B1G1646G-BCK0T vs MT41J64M16JT-15EAIT:G |
| MT41J64M16LA-15E:E | DDR DRAM, 64MX16, CMOS, PBGA96, 9 X 15.50 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4B1G1646G-BCK0T vs MT41J64M16LA-15E:E |
| H5TQ1G63AFP-S6C | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA96, FPBGA-96 | SK Hynix Inc | K4B1G1646G-BCK0T vs H5TQ1G63AFP-S6C |
| K4W1G1646E-HC150 | DDR DRAM, 64MX16, 0.25ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Samsung Semiconductor | K4B1G1646G-BCK0T vs K4W1G1646E-HC150 |
| NT5CB64M16DP-DH | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 | Nanya Technology Corporation | K4B1G1646G-BCK0T vs NT5CB64M16DP-DH |
| H5TQ1G63AFP-S5C | DDR DRAM, 64MX16, 0.2ns, CMOS, PBGA96, FBGA-96 | SK Hynix Inc | K4B1G1646G-BCK0T vs H5TQ1G63AFP-S5C |