Datasheets
K4B1G1646I-BMMA0 by: Samsung Semiconductor

DDR DRAM, 64MX16, CMOS, PBGA96, FBGA-96

Part Details for K4B1G1646I-BMMA0 by Samsung Semiconductor

Overview of K4B1G1646I-BMMA0 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for K4B1G1646I-BMMA0

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K4B1G1646I-BMMA0 Part Data Attributes:

K4B1G1646I-BMMA0 Samsung Semiconductor
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K4B1G1646I-BMMA0 Samsung Semiconductor DDR DRAM, 64MX16, CMOS, PBGA96, FBGA-96
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description VFBGA,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
JESD-30 Code R-PBGA-B96
Length 13.3 mm
Memory Density 1073741824 bit
Memory IC Type DDR3L DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 64MX16
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max 1 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.45 V
Supply Voltage-Min (Vsup) 1.283 V
Supply Voltage-Nom (Vsup) 1.35 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 7.5 mm

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