Part Details for K4B4G1646D-BCMA0 by Samsung Semiconductor
Overview of K4B4G1646D-BCMA0 by Samsung Semiconductor
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for K4B4G1646D-BCMA0
K4B4G1646D-BCMA0 CAD Models
K4B4G1646D-BCMA0 Part Data Attributes
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K4B4G1646D-BCMA0
Samsung Semiconductor
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Datasheet
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K4B4G1646D-BCMA0
Samsung Semiconductor
DDR DRAM, 256MX16, 0.195ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.195 ns | |
| Additional Feature | PROGRAMMABLE CAS LATENCY | |
| JESD-30 Code | R-PBGA-B96 | |
| Length | 13.3 mm | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 96 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 256MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Seated Height-Max | 1.2 mm | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 7.5 mm |