Datasheets
K4D263238E-GC250 by: Samsung Semiconductor

DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, FBGA-144

Part Details for K4D263238E-GC250 by Samsung Semiconductor

Overview of K4D263238E-GC250 by Samsung Semiconductor

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Applications Computing and Data Storage

Part Details for K4D263238E-GC250

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K4D263238E-GC250 Part Data Attributes

K4D263238E-GC250 Samsung Semiconductor
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K4D263238E-GC250 Samsung Semiconductor DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, FBGA-144
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LFBGA,
Pin Count 144
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.55 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code S-PBGA-B144
Length 12 mm
Memory Density 134217728 bit
Memory IC Type DDR DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 65 °C
Operating Temperature-Min
Organization 4MX32
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Shape SQUARE
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.94 V
Supply Voltage-Min (Vsup) 2.66 V
Supply Voltage-Nom (Vsup) 2.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 12 mm

Alternate Parts for K4D263238E-GC250

This table gives cross-reference parts and alternative options found for K4D263238E-GC250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D263238E-GC250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4D263238E-GC220 DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D263238E-GC250 vs K4D263238E-GC220
K4D263238E-VC250 DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144 Samsung Semiconductor K4D263238E-GC250 vs K4D263238E-VC250
Part Number Description Manufacturer Compare
HY5DW283222BFP-4 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144 SK Hynix Inc K4D263238E-GC250 vs HY5DW283222BFP-4
DC0122A-35 DDR DRAM, 4MX32, 0.5ns, CMOS, PBGA144, FBGA-144 Elpida Memory Inc K4D263238E-GC250 vs DC0122A-35
HYB25D128323C-5 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA128, MO-205BD, TFBGA-128 Infineon Technologies AG K4D263238E-GC250 vs HYB25D128323C-5
K4D263238I-GC400 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D263238E-GC250 vs K4D263238I-GC400
K4D263238K-FC400 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, ROHS COMPLIANT, FBGA-144 Samsung Semiconductor K4D263238E-GC250 vs K4D263238K-FC400
HY5DW283222BFP-2 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144 SK Hynix Inc K4D263238E-GC250 vs HY5DW283222BFP-2
K4D263238E-VC220 DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144 Samsung Semiconductor K4D263238E-GC250 vs K4D263238E-VC220
IS43R32400A-6BL DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-144 Integrated Silicon Solution Inc K4D263238E-GC250 vs IS43R32400A-6BL
HY5DW283222AF-25 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, FBGA-144 SK Hynix Inc K4D263238E-GC250 vs HY5DW283222AF-25
K4D263238G-GC330 DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D263238E-GC250 vs K4D263238G-GC330

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