Memory
K4D26323AA-GL45
Samsung Semiconductor
Description: DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144

Overview of K4D26323AA-GL45 by Samsung Semiconductor

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Where used in Applications: Consumer Electronics

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Part Data Attributes for K4D26323AA-GL45 by Samsung Semiconductor

K4D26323AA-GL45
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
LFBGA, BGA144,12X12,32
Pin Count
144
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.7 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
222 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
S-PBGA-B144
JESD-609 Code
e0
Length
12 mm
Memory Density
134217728 bit
Memory IC Type
DDR1 DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
144
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Organization
4MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
LFBGA
Package Equivalence Code
BGA144,12X12,32
Package Shape
SQUARE
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.4 mm
Self Refresh
YES
Sequential Burst Length
2,4,8,FP
Standby Current-Max
0.055 A
Supply Current-Max
0.69 mA
Supply Voltage-Max (Vsup)
2.625 V
Supply Voltage-Min (Vsup)
2.375 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Terminal Finish
TIN LEAD
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
12 mm
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  1. K4D26323AA-GL45
    Samsung Semiconductor
    DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144
    VS

Alternate Parts for K4D26323AA-GL45

This table gives cross-reference parts and alternative options found for K4D26323AA-GL45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D26323AA-GL45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4D263238K-GC500 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4D263238K-GC500
K4D263238I-GC50T DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4D263238I-GC50T
NT5DS4M32EG-6 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, LEAD FREE, FBGA-144 Nanya Technology Corporation K4D26323AA-GL45 vs NT5DS4M32EG-6
NT5DS4M32EF-5 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144 Nanya Technology Corporation K4D26323AA-GL45 vs NT5DS4M32EF-5
K4D263238K-GC50T DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4D263238K-GC50T
MT46V4M32FK-45 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, PLASTIC, FBGA-144 Micron Technology Inc K4D26323AA-GL45 vs MT46V4M32FK-45
K4D26323AA-GL450 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4D26323AA-GL450
W9412G2IB-6I DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144 Winbond Electronics Corp K4D26323AA-GL45 vs W9412G2IB-6I
EDD1232ABBH-5C-E DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, ROHS COMPLIANT, FBGA-144 Elpida Memory Inc K4D26323AA-GL45 vs EDD1232ABBH-5C-E
MT46V4M32FK-4 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, PLASTIC, FBGA-144 Micron Technology Inc K4D26323AA-GL45 vs MT46V4M32FK-4
Part Number Description Manufacturer Compare
EDD1232AABH-7A-E DDR DRAM, 4MX32, 0.75ns, CMOS, PBGA144, ROHS COMPLIANT, FBGA-144 Elpida Memory Inc K4D26323AA-GL45 vs EDD1232AABH-7A-E
HY5DS283222BF-36 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, FBGA-144 SK Hynix Inc K4D26323AA-GL45 vs HY5DS283222BF-36
HY5DS283222BF-28 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, FBGA-144 SK Hynix Inc K4D26323AA-GL45 vs HY5DS283222BF-28
K4D26323AA-GL50 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4D26323AA-GL50
HY5DS283222BF-4 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, FBGA-144 SK Hynix Inc K4D26323AA-GL45 vs HY5DS283222BF-4
K4D263238G-VC360 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4D263238G-VC360
K4D26323QG-VC250 DDR DRAM, 4MX32, 0.45ns, CMOS, PBGA144, LEAD FREE, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4D26323QG-VC250
K4N26323AE-GC22 DDR DRAM, 4MX32, 0.45ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4N26323AE-GC22
K4D263238K-GC50T DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4D263238K-GC50T
K4D263238A-GC45 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor K4D26323AA-GL45 vs K4D263238A-GC45

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