Part Details for K4D551638D-TC33T by Samsung Semiconductor
Overview of K4D551638D-TC33T by Samsung Semiconductor
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Part Details for K4D551638D-TC33T
K4D551638D-TC33T CAD Models
K4D551638D-TC33T Part Data Attributes
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K4D551638D-TC33T
Samsung Semiconductor
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Datasheet
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K4D551638D-TC33T
Samsung Semiconductor
DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66,
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | TSSOP, TSSOP66,.46 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Time-Max | 0.6 ns | |
Clock Frequency-Max (fCLK) | 300 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PDSO-G66 | |
Memory Density | 268435456 bit | |
Memory IC Type | GDDR1 DRAM | |
Memory Width | 16 | |
Number of Terminals | 66 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Temperature-Max | 65 °C | |
Operating Temperature-Min | ||
Organization | 16MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Equivalence Code | TSSOP66,.46 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.07 A | |
Supply Current-Max | 0.45 mA | |
Supply Voltage-Nom (Vsup) | 2.6 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.635 mm | |
Terminal Position | DUAL |