Datasheets
K4D551638D-TC33T by: Samsung Semiconductor

DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66,

Part Details for K4D551638D-TC33T by Samsung Semiconductor

Overview of K4D551638D-TC33T by Samsung Semiconductor

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Part Details for K4D551638D-TC33T

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K4D551638D-TC33T Part Data Attributes

K4D551638D-TC33T Samsung Semiconductor
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K4D551638D-TC33T Samsung Semiconductor DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description TSSOP, TSSOP66,.46
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Time-Max 0.6 ns
Clock Frequency-Max (fCLK) 300 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
Memory Density 268435456 bit
Memory IC Type GDDR1 DRAM
Memory Width 16
Number of Terminals 66
Number of Words 16777216 words
Number of Words Code 16000000
Operating Temperature-Max 65 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Sequential Burst Length 2,4,8
Standby Current-Max 0.07 A
Supply Current-Max 0.45 mA
Supply Voltage-Nom (Vsup) 2.6 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.635 mm
Terminal Position DUAL

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