Memory
K4D551638F-LC360
Samsung Semiconductor
Description: DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66

Overview of K4D551638F-LC360 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 4 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for K4D551638F-LC360 by Samsung Semiconductor
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Part Data Attributes for K4D551638F-LC360 by Samsung Semiconductor

K4D551638F-LC360
Samsung Semiconductor
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSSOP, TSSOP66,.46
Pin Count
66
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.6 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
166 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PDSO-G66
JESD-609 Code
e6
Length
22.22 mm
Memory Density
268435456 bit
Memory IC Type
GDDR1 DRAM
Memory Width
16
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Number of Terminals
66
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
65 °C
Operating Temperature-Min
Organization
16MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSSOP
Package Equivalence Code
TSSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
2,4,8
Supply Current-Max
0.35 mA
Supply Voltage-Max (Vsup)
2.9 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
2.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
Terminal Pitch
0.65 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. K4D551638F-LC360
    Samsung Semiconductor
    DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
    VS

Alternate Parts for K4D551638F-LC360

This table gives cross-reference parts and alternative options found for K4D551638F-LC360. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D551638F-LC360, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4D551638D-LC2A0 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor K4D551638F-LC360 vs K4D551638D-LC2A0
K4D551638F-TC330 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4D551638F-LC360 vs K4D551638F-TC330
K4D551638F-LC330 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor K4D551638F-LC360 vs K4D551638F-LC330
K4D551638F-TC360 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4D551638F-LC360 vs K4D551638F-TC360

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