Datasheets
K4E171611D-JL50 by: Samsung Semiconductor

EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

Part Details for K4E171611D-JL50 by Samsung Semiconductor

Overview of K4E171611D-JL50 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Renewable Energy Entertainment and Gaming Robotics and Drones

Available Datasheets

Part # Manufacturer Description Datasheet
RJL5020DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 500V 38A 135Mohm To-3P
RJL5014DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 500V 19A 400Mohm To-3P
RJL5032DPP-M0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 500V 3A 2800Mohm To-220Fl

Part Details for K4E171611D-JL50

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K4E171611D-JL50 Part Data Attributes

K4E171611D-JL50 Samsung Semiconductor
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K4E171611D-JL50 Samsung Semiconductor EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SOJ
Package Description SOJ, SOJ44,.44
Pin Count 42
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O Type COMMON
JESD-30 Code R-PDSO-J42
Length 27.31 mm
Memory Density 16777216 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 42
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOJ
Package Equivalence Code SOJ44,.44
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 3.76 mm
Self Refresh YES
Standby Current-Max 0.0002 A
Supply Current-Max 0.1 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form J BEND
Terminal Pitch 1.27 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4E171611D-JL50

This table gives cross-reference parts and alternative options found for K4E171611D-JL50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E171611D-JL50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT4C1M16E5DJS-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Micron Technology Inc K4E171611D-JL50 vs MT4C1M16E5DJS-5
AS4C1M16E5-50JI EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Alliance Semiconductor Corporation K4E171611D-JL50 vs AS4C1M16E5-50JI
M5M418165CJ-5T EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 Mitsubishi Electric K4E171611D-JL50 vs M5M418165CJ-5T
V53C518165AK50I EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Mosel Vitelic Corporation K4E171611D-JL50 vs V53C518165AK50I
K4E151611C-JL50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Samsung Semiconductor K4E171611D-JL50 vs K4E151611C-JL50
IS41C16100-50K EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, MS-027, SOJ-42 Integrated Silicon Solution Inc K4E171611D-JL50 vs IS41C16100-50K
V53C511816500K50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Mosel Vitelic Corporation K4E171611D-JL50 vs V53C511816500K50
K4E151611D-JC500 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, Samsung Semiconductor K4E171611D-JL50 vs K4E151611D-JC500
V53C516165AK50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Mosel Vitelic Corporation K4E171611D-JL50 vs V53C516165AK50
V53C518165ASK50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Mosel Vitelic Corporation K4E171611D-JL50 vs V53C518165ASK50
Part Number Description Manufacturer Compare
M5M416165CJ-5T EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 Mitsubishi Electric K4E171611D-JL50 vs M5M416165CJ-5T
M5M418165CJ-5T EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 Mitsubishi Electric K4E171611D-JL50 vs M5M418165CJ-5T
IS41C16100-50KL EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-42 Integrated Silicon Solution Inc K4E171611D-JL50 vs IS41C16100-50KL
KM416C1004CJ-L5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Samsung Semiconductor K4E171611D-JL50 vs KM416C1004CJ-L5
HM5118165LJ-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Hitachi Ltd K4E171611D-JL50 vs HM5118165LJ-5
IBM0116165MJ3-50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 IBM K4E171611D-JL50 vs IBM0116165MJ3-50
V53C181608K50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Mosel Vitelic Corporation K4E171611D-JL50 vs V53C181608K50
GM71C18163CLJ-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, LG Semicon Co Ltd K4E171611D-JL50 vs GM71C18163CLJ-5
MT4C1M16E5DJ-5TR EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Micron Technology Inc K4E171611D-JL50 vs MT4C1M16E5DJ-5TR
GM71C16163CLJ-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, LG Semicon Co Ltd K4E171611D-JL50 vs GM71C16163CLJ-5

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