Datasheets
K4E660412E-TI50 by: Samsung Semiconductor

EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

Part Details for K4E660412E-TI50 by Samsung Semiconductor

Overview of K4E660412E-TI50 by Samsung Semiconductor

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Part Details for K4E660412E-TI50

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K4E660412E-TI50 Part Data Attributes:

K4E660412E-TI50 Samsung Semiconductor
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K4E660412E-TI50 Samsung Semiconductor EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2,
Pin Count 32
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-G32
Length 20.95 mm
Memory Density 67108864 bit
Memory IC Type EDO DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 32
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 16MX4
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form GULL WING
Terminal Pitch 1.27 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4E660412E-TI50

This table gives cross-reference parts and alternative options found for K4E660412E-TI50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E660412E-TI50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TC5164405BFT-50 IC 16M X 4 EDO DRAM, 50 ns, PDSO32, 0.400 ICNH, 1.27 MM PITCH, PLASTIC, TSOP2-32, Dynamic RAM Toshiba America Electronic Components K4E660412E-TI50 vs TC5164405BFT-50
TC5165405AFT-50 IC 16M X 4 EDO DRAM, 50 ns, PDSO32, 0.400 INCH, PLASTIC, TSOP-32, Dynamic RAM Toshiba America Electronic Components K4E660412E-TI50 vs TC5165405AFT-50
TMS465409P-50DGC 16MX4 EDO DRAM, 50ns, PDSO32, 0.400 INCH, PLASTIC, TSOP-32 Texas Instruments K4E660412E-TI50 vs TMS465409P-50DGC
UPD4264405G5-A50-7JD EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 NEC Electronics Group K4E660412E-TI50 vs UPD4264405G5-A50-7JD
MT4LC16M4G3TG-5 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP-32 Micron Technology Inc K4E660412E-TI50 vs MT4LC16M4G3TG-5
HYB3165405BT-50 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Siemens K4E660412E-TI50 vs HYB3165405BT-50
HM5165405ALTT-5 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, MO-133AC, TSOP2-32 Hitachi Ltd K4E660412E-TI50 vs HM5165405ALTT-5
M5M467405BTP-5 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, TSOP-32 Mitsubishi Electric K4E660412E-TI50 vs M5M467405BTP-5
IBM0165405PT3C-50 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 X 0.825 INCH, PLASTIC, TSOP2-32 IBM K4E660412E-TI50 vs IBM0165405PT3C-50
K4E660412E-TP50 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Samsung Semiconductor K4E660412E-TI50 vs K4E660412E-TP50
Part Number Description Manufacturer Compare
K4F660412C-TL500 Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Samsung Semiconductor K4E660412E-TI50 vs K4F660412C-TL500
M5M465405ATP-5 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-32 Mitsubishi Electric K4E660412E-TI50 vs M5M465405ATP-5
KM44V16100AS-L5 Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 Samsung Semiconductor K4E660412E-TI50 vs KM44V16100AS-L5
HM5164400ALTT-5 Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, MO-133AC, TSOP2-32 Hitachi Ltd K4E660412E-TI50 vs HM5164400ALTT-5
K4E660412B-TL600 EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Samsung Semiconductor K4E660412E-TI50 vs K4E660412B-TL600
GM71VS64403CT-5 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, LG Semicon Co Ltd K4E660412E-TI50 vs GM71VS64403CT-5
M5M465400DTP-5 Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, TSOP-32 Mitsubishi Electric K4E660412E-TI50 vs M5M465400DTP-5
HYB3164400ATL-50 Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Infineon Technologies AG K4E660412E-TI50 vs HYB3164400ATL-50
HY51V65404SLTC-50 EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 SK Hynix Inc K4E660412E-TI50 vs HY51V65404SLTC-50
K4F640411C-TL60 Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Samsung Semiconductor K4E660412E-TI50 vs K4F640411C-TL60

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