Part Details for K4H510838D-VCB00 by Samsung Semiconductor
Overview of K4H510838D-VCB00 by Samsung Semiconductor
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- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4H510838D-VCB00
K4H510838D-VCB00 CAD Models
K4H510838D-VCB00 Part Data Attributes
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K4H510838D-VCB00
Samsung Semiconductor
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Datasheet
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K4H510838D-VCB00
Samsung Semiconductor
DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, ROHS COMPLIANT, STSOP2-54
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSSOP, TSSOP54,.46,16 | |
Pin Count | 54 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.28 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.75 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
Length | 11.2 mm | |
Memory Density | 536870912 bit | |
Memory IC Type | DDR1 DRAM | |
Memory Width | 8 | |
Moisture Sensitivity Level | 2 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 64MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Equivalence Code | TSSOP54,.46,16 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.005 A | |
Supply Current-Max | 0.325 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.4 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4H510838D-VCB00
This table gives cross-reference parts and alternative options found for K4H510838D-VCB00. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510838D-VCB00, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT48LC64M8A2P-75LIT:C | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | K4H510838D-VCB00 vs MT48LC64M8A2P-75LIT:C |
IS42S86400B-7TLI | Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 | Integrated Silicon Solution Inc | K4H510838D-VCB00 vs IS42S86400B-7TLI |
HY57V12820T-H | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4H510838D-VCB00 vs HY57V12820T-H |
HM5251805BTD-A6 | Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Hitachi Ltd | K4H510838D-VCB00 vs HM5251805BTD-A6 |
K4H510838B-NCC40 | DDR DRAM, 64MX8, 0.65ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4H510838D-VCB00 vs K4H510838B-NCC40 |
DPSD64ME8WKY5-DP-XX60 | Synchronous DRAM Module, 64MX8, CMOS, PDSO54, STACKED, TSOP2-54 | B&B Electronics Manufacturing Company | K4H510838D-VCB00 vs DPSD64ME8WKY5-DP-XX60 |
K4S510732B-TL1H0 | Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4H510838D-VCB00 vs K4S510732B-TL1H0 |
EDS5108ABTA-75 | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54 | Elpida Memory Inc | K4H510838D-VCB00 vs EDS5108ABTA-75 |
MT48LC64M8A2TG-7E | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | K4H510838D-VCB00 vs MT48LC64M8A2TG-7E |
K4S510832B-KL1H | Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4H510838D-VCB00 vs K4S510832B-KL1H |