Part Details for K4M283233H-HN75T by Samsung Semiconductor
Overview of K4M283233H-HN75T by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Computing and Data Storage
Part Details for K4M283233H-HN75T
K4M283233H-HN75T CAD Models
K4M283233H-HN75T Part Data Attributes:
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K4M283233H-HN75T
Samsung Semiconductor
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Datasheet
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K4M283233H-HN75T
Samsung Semiconductor
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | VFBGA, BGA90,9X15,32 | |
Pin Count | 90 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PBGA-B90 | |
Length | 13 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 32 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 90 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -25 °C | |
Organization | 4MX32 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | VFBGA | |
Package Equivalence Code | BGA90,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.0005 A | |
Supply Current-Max | 0.13 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL EXTENDED | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 8 mm |
Alternate Parts for K4M283233H-HN75T
This table gives cross-reference parts and alternative options found for K4M283233H-HN75T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4M283233H-HN75T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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K4M283233H-HN750 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4M283233H-HN75T vs K4M283233H-HN750 |
K4M283233H-FN750 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M283233H-HN75T vs K4M283233H-FN750 |
K4M283233H-FN75T | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M283233H-HN75T vs K4M283233H-FN75T |
K4M283233H-HG750 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4M283233H-HN75T vs K4M283233H-HG750 |