Part Details for K4S161622D-TP10 by Samsung Semiconductor
Overview of K4S161622D-TP10 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4S161622D-TP10
K4S161622D-TP10 CAD Models
K4S161622D-TP10 Part Data Attributes
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K4S161622D-TP10
Samsung Semiconductor
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K4S161622D-TP10
Samsung Semiconductor
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP50,.46,32 | |
Pin Count | 50 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 100 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 2048 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.115 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4S161622D-TP10
This table gives cross-reference parts and alternative options found for K4S161622D-TP10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S161622D-TP10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HY57V161610DTC-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | K4S161622D-TP10 vs HY57V161610DTC-8 |
UPD4516161AG5-A80-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics America Inc | K4S161622D-TP10 vs UPD4516161AG5-A80-9NF |
AS4LC1M16S0-10TC | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Alliance Semiconductor Corporation | K4S161622D-TP10 vs AS4LC1M16S0-10TC |
HY57V161610DTC-10S | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | K4S161622D-TP10 vs HY57V161610DTC-10S |
MSM56V16160F-8TS-K | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | OKI Electric Industry Co Ltd | K4S161622D-TP10 vs MSM56V16160F-8TS-K |
UPD4516161AG5-A80-9NF | 1MX16 SYNCHRONOUS DRAM, 6ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Renesas Electronics Corporation | K4S161622D-TP10 vs UPD4516161AG5-A80-9NF |
UPD4516161AG5-A10L-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics America Inc | K4S161622D-TP10 vs UPD4516161AG5-A10L-9NF |
MB81F161622C-80LFN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | K4S161622D-TP10 vs MB81F161622C-80LFN |
KM416S1020CT-GH | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4S161622D-TP10 vs KM416S1020CT-GH |
MB81F161622C-80FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | K4S161622D-TP10 vs MB81F161622C-80FN |