Datasheets
K4S510832C-KC1H by: Samsung Semiconductor

Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

Part Details for K4S510832C-KC1H by Samsung Semiconductor

Overview of K4S510832C-KC1H by Samsung Semiconductor

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Part Details for K4S510832C-KC1H

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K4S510832C-KC1H Part Data Attributes

K4S510832C-KC1H Samsung Semiconductor
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K4S510832C-KC1H Samsung Semiconductor Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2, TSOP54,.46,32
Pin Count 54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.004 A
Supply Current-Max 0.21 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4S510832C-KC1H

This table gives cross-reference parts and alternative options found for K4S510832C-KC1H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S510832C-KC1H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4S510732C-TC1L Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510732C-TC1L
K4S510832B-KL1L Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510832B-KL1L
K4S510832C-KL1L Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510832C-KL1L
K4S510832B-KL1H Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510832B-KL1H
K4S510832B-KC1L Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510832B-KC1L
K4S510732C-TL1L Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510732C-TL1L
K4S510732B-TL1L Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510732B-TL1L
K4S510832C-KC1L Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510832C-KC1L
K4S510732B-TC1H Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510732B-TC1H
K4S510732B-TL1H Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510732B-TL1H
Part Number Description Manufacturer Compare
HYB39S512800AEL-7 Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG K4S510832C-KC1H vs HYB39S512800AEL-7
K4S510832C-KL1H Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510832C-KL1H
HYB39S512800AT-7.5 Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG K4S510832C-KC1H vs HYB39S512800AT-7.5
HYB39S512800ATL-6 Synchronous DRAM, 64MX8, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG K4S510832C-KC1H vs HYB39S512800ATL-6
HM5251805BLTD-B6 Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Hitachi Ltd K4S510832C-KC1H vs HM5251805BLTD-B6
K4S510732C-TL1L Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4S510732C-TL1L
HY57V12820T-6 Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S510832C-KC1H vs HY57V12820T-6
K4H510838B-NLB30 DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 Samsung Semiconductor K4S510832C-KC1H vs K4H510838B-NLB30
HYB39S512800AEL-6 Synchronous DRAM, 64MX8, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG K4S510832C-KC1H vs HYB39S512800AEL-6
MT48LC64M8A2TG-75LIT:C Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510832C-KC1H vs MT48LC64M8A2TG-75LIT:C

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