Part Details for K4S510832M-TC75 by Samsung Semiconductor
Overview of K4S510832M-TC75 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
TC75S102F | Toshiba Electronic Devices & Storage Corporation | Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 | |
LTC7541AJSW#PBF | Analog Devices | Imp Ind St&ard CMOS 12-B Mult | |
LTC7545ACSW#PBF | Analog Devices | Imp Ind St&ard Parallel 12-B M |
Part Details for K4S510832M-TC75
K4S510832M-TC75 CAD Models
K4S510832M-TC75 Part Data Attributes
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K4S510832M-TC75
Samsung Semiconductor
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K4S510832M-TC75
Samsung Semiconductor
Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP54,.46,32 | |
Pin Count | 54 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.28 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e0 | |
Length | 22.22 mm | |
Memory Density | 536870912 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 64MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.005 A | |
Supply Current-Max | 0.33 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4S510832M-TC75
This table gives cross-reference parts and alternative options found for K4S510832M-TC75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S510832M-TC75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HYB39S512800AE-8 | Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | K4S510832M-TC75 vs HYB39S512800AE-8 |
HYB39S512800AT-7 | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | K4S510832M-TC75 vs HYB39S512800AT-7 |
K4H510838B-NCB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4S510832M-TC75 vs K4H510838B-NCB3 |
K4S1G0732D-UC750 | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, STACKED, TSOP2-54 | Samsung Semiconductor | K4S510832M-TC75 vs K4S1G0732D-UC750 |
HY57V12820T-6 | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S510832M-TC75 vs HY57V12820T-6 |
K4S510832D-UC75T | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | K4S510832M-TC75 vs K4S510832D-UC75T |
K4H510838B-NCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 | Samsung Semiconductor | K4S510832M-TC75 vs K4H510838B-NCB30 |
DPSD64MX8WY5-DP-XX152 | Synchronous DRAM Module, 64MX8, CMOS, LEADLESS, STACK, TSOP-54 | B&B Electronics Manufacturing Company | K4S510832M-TC75 vs DPSD64MX8WY5-DP-XX152 |
K4S510732B-TL1H | Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S510832M-TC75 vs K4S510732B-TL1H |
MT48LC64M8A2P-7E:C | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S510832M-TC75 vs MT48LC64M8A2P-7E:C |