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Memory DRAMs K4S513233F-MF1H0

Memory
K4S513233F-MF1H0
Samsung Semiconductor
Description: Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90

Overview of K4S513233F-MF1H0 by Samsung Semiconductor

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Part Data Attributes for K4S513233F-MF1H0 by Samsung Semiconductor
Parametric Data

K4S513233F-MF1H0
Samsung Semiconductor
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
LFBGA,
Pin Count
90
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
7 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B90
Length
13 mm
Memory Density
536870912 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
-25 °C
Organization
16MX32
Package Body Material
PLASTIC/EPOXY
Package Code
LFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
240
Qualification Status
Not Qualified
Seated Height-Max
1.4 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
Width
11 mm
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  1. K4S513233F-MF1H0
    Samsung Semiconductor
    Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90
    VS

Alternate Parts for K4S513233F-MF1H0

This table gives cross-reference parts and alternative options found for K4S513233F-MF1H0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S513233F-MF1H0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4S513233F-EC1H0 Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4S513233F-EC1H0
K4M513233E-MC1H0 Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4M513233E-MC1H0
K4S513233F-ML1L0 Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4S513233F-ML1L0
K4S513233F-MC1H0 Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4S513233F-MC1H0
K4S513233F-EC1L0 Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4S513233F-EC1L0
K4M513233E-MF1H0 Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4M513233E-MF1H0
K4S513233F-ML1LT Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4S513233F-ML1LT
K4M513233E-EL1H0 Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4M513233E-EL1H0
K4S513233F-MF1L0 Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4S513233F-MF1L0
K4M513233E-EL1L0 Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S513233F-MF1H0 vs K4M513233E-EL1L0
Part Number Description Manufacturer Compare
MT46H16M32LGCX-75L:B DDR DRAM, 16MX32, 7.5ns, CMOS, PBGA90, 9 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S513233F-MF1H0 vs MT46H16M32LGCX-75L:B
MT46H16M32LFB5-54LAT:C DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S513233F-MF1H0 vs MT46H16M32LFB5-54LAT:C
MT48H16M32LGCM-8LIT:A Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S513233F-MF1H0 vs MT48H16M32LGCM-8LIT:A
MT48H16M32LGCM-75L:B Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 10 X 13 MM, GREEN, VFBGA-90 Micron Technology Inc K4S513233F-MF1H0 vs MT48H16M32LGCM-75L:B
MT46HC16M32LFCM-54LIT:B DDR DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S513233F-MF1H0 vs MT46HC16M32LFCM-54LIT:B
MT46H16M32LGB5-54IT:C DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S513233F-MF1H0 vs MT46H16M32LGB5-54IT:C
HY5S7B2LF-H Synchronous DRAM, 16MX32, 6.5ns, CMOS, PBGA90, 10 X 13 MM, 0.80 MM PITCH, FBGA-90 SK Hynix Inc K4S513233F-MF1H0 vs HY5S7B2LF-H
MT46H16M32LFCX-54L:B DDR DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S513233F-MF1H0 vs MT46H16M32LFCX-54L:B
IS42SM32160C-7BLI Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-90 Integrated Silicon Solution Inc K4S513233F-MF1H0 vs IS42SM32160C-7BLI
MT46H16M32LFCX-6L:B DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 9 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S513233F-MF1H0 vs MT46H16M32LFCX-6L:B

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