Part Details for K4S641632C-TL100 by Samsung Semiconductor
Overview of K4S641632C-TL100 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4S641632C-TL100
K4S641632C-TL100 CAD Models
K4S641632C-TL100 Part Data Attributes
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K4S641632C-TL100
Samsung Semiconductor
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Datasheet
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K4S641632C-TL100
Samsung Semiconductor
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 66 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 1 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4S641632C-TL100
This table gives cross-reference parts and alternative options found for K4S641632C-TL100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S641632C-TL100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TC59S6416CFT-10 | IC 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | K4S641632C-TL100 vs TC59S6416CFT-10 |
| V54C365164VDT8L | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | K4S641632C-TL100 vs V54C365164VDT8L |
| IBM0364164CT3A-370 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IBM | K4S641632C-TL100 vs IBM0364164CT3A-370 |
| EDI416S4030A10SI | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, TSOP2-54 | Microsemi Corporation | K4S641632C-TL100 vs EDI416S4030A10SI |
| VG36641641AT-10 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | K4S641632C-TL100 vs VG36641641AT-10 |
| HYB39S64160T-80 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Siemens | K4S641632C-TL100 vs HYB39S64160T-80 |
| V54C365164VCT8 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | K4S641632C-TL100 vs V54C365164VCT8 |
| MT48LC4M16A2TG-10L | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | K4S641632C-TL100 vs MT48LC4M16A2TG-10L |
| W986416AH-8 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Winbond Electronics Corp | K4S641632C-TL100 vs W986416AH-8 |
| V54C365164VBT8 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | K4S641632C-TL100 vs V54C365164VBT8 |