Part Details for K4S641632H-UC750 by Samsung Semiconductor
Overview of K4S641632H-UC750 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4S641632H-UC750
K4S641632H-UC750 CAD Models
K4S641632H-UC750 Part Data Attributes
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K4S641632H-UC750
Samsung Semiconductor
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Datasheet
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K4S641632H-UC750
Samsung Semiconductor
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, TSOP2-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 2 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4S641632H-UC750
This table gives cross-reference parts and alternative options found for K4S641632H-UC750. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S641632H-UC750, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AS4C4M16SA-6TAN | Synchronous DRAM, | Alliance Memory Inc | K4S641632H-UC750 vs AS4C4M16SA-6TAN |
| M2V64S40DTP-6 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Mitsubishi Electric | K4S641632H-UC750 vs M2V64S40DTP-6 |
| TC59S6416CFTL-75 | IC 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | K4S641632H-UC750 vs TC59S6416CFTL-75 |
| K4S641632D-TC750 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S641632H-UC750 vs K4S641632D-TC750 |
| M12L128168A-7TVG2N | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Elite Semiconductor Memory Technology Inc | K4S641632H-UC750 vs M12L128168A-7TVG2N |
| HY57V651620BLTC-7I | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S641632H-UC750 vs HY57V651620BLTC-7I |
| V54C365164VDT75 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | K4S641632H-UC750 vs V54C365164VDT75 |
| HM5264165FLTT-75 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Hitachi Ltd | K4S641632H-UC750 vs HM5264165FLTT-75 |
| K4S641632K-UI750 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | K4S641632H-UC750 vs K4S641632K-UI750 |
| HY57V651620BTC-6 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S641632H-UC750 vs HY57V651620BTC-6 |