Part Details for K4S641632H-UL600 by Samsung Semiconductor
Overview of K4S641632H-UL600 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4S641632H-UL600
K4S641632H-UL600 CAD Models
K4S641632H-UL600 Part Data Attributes:
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K4S641632H-UL600
Samsung Semiconductor
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Datasheet
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K4S641632H-UL600
Samsung Semiconductor
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, LEAD FREE, TSOP2-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e6 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4S641632H-UL600
This table gives cross-reference parts and alternative options found for K4S641632H-UL600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S641632H-UL600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W9864G6GH-6I | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | Winbond Electronics Corp | K4S641632H-UL600 vs W9864G6GH-6I |
| K4S641632K-UP600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | K4S641632H-UL600 vs K4S641632K-UP600 |
| V54C36516G4VT6 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | K4S641632H-UL600 vs V54C36516G4VT6 |
| K4S641632H-TC600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, TSOP2-54 | Samsung Semiconductor | K4S641632H-UL600 vs K4S641632H-TC600 |
| K4S641632K-TI600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S641632H-UL600 vs K4S641632K-TI600 |
| HY57V651621TC-7 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S641632H-UL600 vs HY57V651621TC-7 |
| K4S641632E-TL550 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S641632H-UL600 vs K4S641632E-TL550 |
| VG36641641DT-5L | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Vanguard International Semiconductor Corporation | K4S641632H-UL600 vs VG36641641DT-5L |
| IS42S16400E-6TLI | 4MX16 SYNCHRONOUS DRAM, 5ns, PDSO54, 0.400 INCH, LEAD FREE, TSPO2-54 | ABLIC Inc. | K4S641632H-UL600 vs IS42S16400E-6TLI |
| K4S641632E-TC550 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S641632H-UL600 vs K4S641632E-TC550 |