Datasheets
K4S641632K-TC600 by: Samsung Semiconductor

Synchronous DRAM, 4MX4, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

Part Details for K4S641632K-TC600 by Samsung Semiconductor

Overview of K4S641632K-TC600 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for K4S641632K-TC600

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K4S641632K-TC600 Part Data Attributes

K4S641632K-TC600 Samsung Semiconductor
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K4S641632K-TC600 Samsung Semiconductor Synchronous DRAM, 4MX4, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2, TSOP54,.46,32
Pin Count 54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e0
Length 22.22 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.1 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4S641632K-TC600

This table gives cross-reference parts and alternative options found for K4S641632K-TC600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S641632K-TC600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS42S16400C1-6TL Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc K4S641632K-TC600 vs IS42S16400C1-6TL
IS42S16400C1-6T Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc K4S641632K-TC600 vs IS42S16400C1-6T
K4S641632K-UC600 Synchronous DRAM, 4MX4, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor K4S641632K-TC600 vs K4S641632K-UC600
IS42S16400D-6T Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc K4S641632K-TC600 vs IS42S16400D-6T
Part Number Description Manufacturer Compare
V54C365164VDT7L Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation K4S641632K-TC600 vs V54C365164VDT7L
HY57V641620ETP-6I Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc K4S641632K-TC600 vs HY57V641620ETP-6I
IS42S16400C1-7TI Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc K4S641632K-TC600 vs IS42S16400C1-7TI
V54C365164VBT75L Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation K4S641632K-TC600 vs V54C365164VBT75L
IC42S16400F-7TL-TR Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc K4S641632K-TC600 vs IC42S16400F-7TL-TR
V54C365164VEE6 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 ProMOS Technologies Inc K4S641632K-TC600 vs V54C365164VEE6
K4S641632D-TC550 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S641632K-TC600 vs K4S641632D-TC550
IS45S16400E-6TLA1 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 Integrated Silicon Solution Inc K4S641632K-TC600 vs IS45S16400E-6TLA1
KM416S4030DT-G/FA Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S641632K-TC600 vs KM416S4030DT-G/FA
K4S641632E-TL75 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S641632K-TC600 vs K4S641632E-TL75

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