There are no models available for this part yet.
Overview of K4S643233F-DP1L by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
CAD Models for K4S643233F-DP1L by Samsung Semiconductor
Part Data Attributes for K4S643233F-DP1L by Samsung Semiconductor
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|
|
|---|---|
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Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
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|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
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Part Package Code
|
BGA
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Package Description
|
LFBGA, BGA90,9X15,32
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Pin Count
|
90
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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HTS Code
|
8542.32.00.02
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Access Mode
|
FOUR BANK PAGE BURST
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Access Time-Max
|
7 ns
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Additional Feature
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AUTO/SELF REFRESH
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Clock Frequency-Max (fCLK)
|
105 MHz
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I/O Type
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COMMON
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Interleaved Burst Length
|
1,2,4,8
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JESD-30 Code
|
R-PBGA-B90
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Length
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13 mm
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Memory Density
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67108864 bit
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Memory IC Type
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SYNCHRONOUS DRAM
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Memory Width
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32
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Moisture Sensitivity Level
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3
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Number of Functions
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1
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Number of Ports
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1
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Number of Terminals
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90
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Number of Words
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2097152 words
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Number of Words Code
|
2000000
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Operating Mode
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SYNCHRONOUS
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Operating Temperature-Max
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85 °C
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Operating Temperature-Min
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-40 °C
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Organization
|
2MX32
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Output Characteristics
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3-STATE
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Package Body Material
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PLASTIC/EPOXY
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Package Code
|
LFBGA
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Package Equivalence Code
|
BGA90,9X15,32
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Package Shape
|
RECTANGULAR
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Package Style
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GRID ARRAY, LOW PROFILE, FINE PITCH
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Peak Reflow Temperature (Cel)
|
260
|
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Qualification Status
|
Not Qualified
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Refresh Cycles
|
4096
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Seated Height-Max
|
1.4 mm
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Self Refresh
|
YES
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Sequential Burst Length
|
1,2,4,8,FP
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Standby Current-Max
|
0.0005 A
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Supply Current-Max
|
0.12 mA
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Supply Voltage-Max (Vsup)
|
3.6 V
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Supply Voltage-Min (Vsup)
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2.7 V
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Supply Voltage-Nom (Vsup)
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3 V
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Surface Mount
|
YES
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Technology
|
CMOS
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Temperature Grade
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INDUSTRIAL
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Terminal Form
|
BALL
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Terminal Pitch
|
0.8 mm
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Terminal Position
|
BOTTOM
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Width
|
11 mm
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Alternate Parts for K4S643233F-DP1L
This table gives cross-reference parts and alternative options found for K4S643233F-DP1L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643233F-DP1L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IS42SM32200K-6BLI | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 | Integrated Silicon Solution Inc | K4S643233F-DP1L vs IS42SM32200K-6BLI |
| IS42S32200E-6BL | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 | Integrated Silicon Solution Inc | K4S643233F-DP1L vs IS42S32200E-6BL |
| K4S643233H-FG1H0 | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643233F-DP1L vs K4S643233H-FG1H0 |
| HY5V62DF-55 | Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-90 | SK Hynix Inc | K4S643233F-DP1L vs HY5V62DF-55 |
| IS42S32200E-6BLI | 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, LEAD FREE, 0.80 MM PITCH, TFBGA-90 | ABLIC Inc. | K4S643233F-DP1L vs IS42S32200E-6BLI |
| K4S643233H-FN600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643233F-DP1L vs K4S643233H-FN600 |
| HY5V62CF-S | Synchronous DRAM, 2GX32, 6ns, CMOS, PBGA90, 11 X 13 MM, 0.80 MM PITCH, FBGA-90 | SK Hynix Inc | K4S643233F-DP1L vs HY5V62CF-S |
| K4S64323LH-FE1H0 | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643233F-DP1L vs K4S64323LH-FE1H0 |
| MT48LC2M32B2B5-55AT:G | Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 | Micron Technology Inc | K4S643233F-DP1L vs MT48LC2M32B2B5-55AT:G |
| K4S643233H-HE750 | Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S643233F-DP1L vs K4S643233H-HE750 |